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pro vyhledávání: '"Naik, Nachiket R."'
Autor:
Naik, Nachiket R., Gabritchidze, Bekari, Chen, Justin H., Kooi, Jacob, Cleary, Kieran A., Minnich, Austin J.
The deviations of cryogenic collector current-voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of investigation for many years. Recent work indicates that direct tunneling a
Externí odkaz:
http://arxiv.org/abs/2302.14210
Autor:
Naik, Nachiket R., Minnich, Austin J.
Publikováno v:
J. Appl. Phys. 130, 174504 (2021)
Silicon-germanium heterojunction bipolar transistors (HBTs) are of interest as low-noise microwave amplifiers due to their competitive noise performance and low cost relative to III-V devices. The fundamental noise performance limits of HBTs are thus
Externí odkaz:
http://arxiv.org/abs/2106.05374
Autor:
Naik, Nachiket R., Gabritchidze, Bekari, Chen, Justin H., Cleary, Kieran A., Kooi, Jacob, Minnich, Austin J.
Publikováno v:
Journal of Applied Physics; 4/28/2024, Vol. 135 Issue 16, p1-7, 7p