Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Nai-Ben Min"'
Publikováno v:
Journal of Coordination Chemistry. 47:349-358
Triboluminescence of imidazolium tetrakis(dibenzoylmethanato)europate (1) was observed. Its crystal structure and the triboluminescent spectrum were determined. The crystal is centrosym-metric and the triboluminscent maximum is similar to that of its
Publikováno v:
Polyhedron. 17:1883-1889
Triboluminescent phenomenon of 1,4-dimethylpyridinium tetrakis(then oyltrifluoroacetonato) europate (1) was firstly observed. Its crystal structure and the triboluminescent spectrum were successfully determined. The crystal is centrosymmetric and the
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 119:505-509
Porous β-SiC has been formed by C + implantation into crystal Si followed by thermal annealing and anodization. The photoluminescence was measured. The microstructures were observed by cross-sectional and planar electron transmission microscope (TEM
Publikováno v:
Physica Status Solidi (a). 155:233-238
Porous β-SiC on Si substrates was prepared by carbon ion implantation into Si crystal wafers with a dose of 5 x 10 17 cm -2 at an energy of 50 keV followed by thermal annealing and electrochemical anodization. Compared with common porous Si, the Si-
Publikováno v:
Journal of Luminescence. 68:199-204
Three primary color emission bands, 467 nm (~ 2.7 eV), 540 nm (~ 2.3 eV), and 680 nm (~ 1.8 eV), were observed from Si+-implanted thermal SiO2 films on crystalline Si under ultraviolet excitation at room temperature. The blue emission is caused by ox
Publikováno v:
Solid State Communications. 97:1039-1042
implanted SiO2 films is studied as a function of different fabricating conditions (implantation dose, annealing temperature and time). The SiO2 films containing Ge nanocrystals exhibit two photoluminescence (PL) bands peaked at 600 nm and 780 nm. The
Publikováno v:
Chinese Physics Letters. 13:109-112
We investigate theoretically optical response in a two-dimensional optical superlattice with Kerr-type nonlinearity. We find that in addition to the bistability reported in Phys. Rev. Lett. 71 (1993) 1003 by Xu et al., a new type of bistable switchin
Publikováno v:
Solid State Communications. 95:559-562
Carbon ions were implanted into silicon crystal wafers with doses of 1014–1017 cm−2 at an energy of 50 KeV followed by thermal annealing and anodization to form porous β-SiC. The photoluminescence (PL) from the porous structures on C+-implanted
Publikováno v:
Chinese Physics Letters. 15:426-428
A Thue-Morse optical superlattice made from a single crystal with laminar ferroelectric domain structure was proposed to realize second-harmonic generation. Due to the singular continuous Fourier spectrum in Thue-Morse sequence, this structure shows
Publikováno v:
Chinese Physics Letters. 13:913-915
It is shown that, when two coherent waves are obliquely incident to a one-dimensional nonlinear optical superlattice containing Kerr-form dielectric nonlinearity, an incident-dependent two-dimensional nonlinear optical superlattice can be constructed