Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Nai Sheng Wu"'
Autor:
Shui-Jinn Wang, Chien Hsiung Hung, Hao Ping Yan, Pang Yi Liu, Chien Hung Wu, Tseng Hsing Lin, Nai Sheng Wu
Publikováno v:
Materials Science in Semiconductor Processing. 67:84-91
The use of co-sputtered Zirconium Silicon Oxide (ZrxSi1−xO2) gate dielectrics to improve the performance of α-IGZO TFT is demonstrated. Through modulating the sputtering power of the SiO2 and ZrO2 targets, the control of dielectric constant in a r
Autor:
Nai Sheng Wu, Chien-Hung Wu, Hao Ping Yan, Chien Hsiung Hung, Ya Chi Huang, Yu Hsueh Chin, Shui-Jinn Wang
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Autor:
Pang Yi Liu, Yen Hao-Ping, Chien Hung Wu, Tseng Hsing Lin, Nai Sheng Wu, Chien Hsiung Hung, Shui-Jinn Wang
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Autor:
Yen Hao-Ping, Pang Yi Liu, Shui-Jinn Wang, Cheng Han Wu, Chien Hung Wu, Tseng Hsing Lin, Nai Sheng Wu, Chien Hsiung Hung
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Autor:
Tseng-Hsing Lin, C. H. Wu, Chien-Hsiung Hung, Pang-Yi Liu, Shui-Jinn Wang, Hao-Ping Yan, Nai-Sheng Wu
Publikováno v:
2016 74th Annual Device Research Conference (DRC).
In recent years, amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs) with much better performance compared with the low-temperature polysilicon (LTPS) counterpart have been demonstrated [1-2], nevertheless, continuous efforts a
Autor:
Pang Yi Liu, Chien Hsiung Hung, Chien Hung Wu, Tseng Hsing Lin, Hao Ping Yan, Shui-Jinn Wang, Nai Sheng Wu
Publikováno v:
Japanese Journal of Applied Physics. 56:04CG06
The use of co-sputtered zirconium silicon oxide (Zr x Si1− x O2) gate dielectrics to improve the gate controllability of amorphous indium gallium zinc oxide (α-IGZO) thin-film transistors (TFTs) through a room-temperature fabrication process is pr
Autor:
Chien-Hsiung Hung, Shui-Jinn Wang, Pang-Yi Liu, Chien-Hung Wu, Nai-Sheng Wu, Hao-Ping Yan, Tseng-Hsing Lin
Publikováno v:
Japanese Journal of Applied Physics; Apr2017, Vol. 56 Issue 4S, p1-1, 1p