Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Nahid Sultan Al-Mamun"'
Autor:
Md Hafijur Rahman, Nahid Sultan Al-Mamun, Nicholas Glavin, Aman Haque, Fan Ren, Stephen Pearton, Douglas E. Wolfe
Publikováno v:
Applied Physics Express, Vol 17, Iss 4, p 047001 (2024)
In this study, we explore the rejuvenation of a Zener diode degraded by high electrical stress, leading to a leftward shift, and broadening of the Zener breakdown voltage knee, alongside a 57% reduction in forward current. We employed a non-thermal a
Externí odkaz:
https://doaj.org/article/20f29f640763420eb0af9e62343f63c4
Autor:
Md Abu Jafar Rasel, Nahid Sultan Al-Mamun, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen J. Pearton
Publikováno v:
Applied Physics Letters. 122
In this work, we demonstrate the rejuvenation of Ti/4H-SiC Schottky barrier diodes after forward current-induced degradation, at room temperature and in a few seconds, by exploiting the physics of high-energy electron interactions with defects. The d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87c01274721b7618d83dd45f2dab7049
https://doi.org/10.1063/5.0140490
https://doi.org/10.1063/5.0140490
Autor:
Md Abu Jafar Rasel, Ryan Schoell, Nahid Sultan Al-Mamun, Khalid Hattar, C Thomas Harris, Aman Haque, Douglas E Wolfe, Fan Ren, Stephen J Pearton
Publikováno v:
Journal of Physics D: Applied Physics. 56:305104
While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0bc1f717f563067241058bfddf7b312
https://doi.org/10.1088/1361-6463/accfa7
https://doi.org/10.1088/1361-6463/accfa7
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:055003
The energy and beam current dependence of Ga+ focused ion beam milling damage on the sidewall of vertical rectifiers fabricated on n-type Ga2O3 was investigated with 5–30 kV ions and beam currents from 1.3–20 nA. The sidewall damage was introduce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a3561bd817ee6891f962348e9bdedcc
https://doi.org/10.1149/2162-8777/acce6a
https://doi.org/10.1149/2162-8777/acce6a
Publikováno v:
Journal of Micromechanics and Microengineering. 33:045007
MXenes are atomically layered carbides and nitrides of transition metals that have potential for micro-devices applications in energy storage, conversion, and transport. This emerging family of materials is typically studied as nanosheets or ultra-th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f831cd1d37d62a88af4721b021ec3379
https://doi.org/10.1088/1361-6439/acbfc4
https://doi.org/10.1088/1361-6439/acbfc4
Publikováno v:
Scripta Materialia. 224:115107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a8e6ff7620a8cdef1412f0ada548f5b
https://doi.org/10.1016/j.scriptamat.2022.115107
https://doi.org/10.1016/j.scriptamat.2022.115107
Autor:
Nahid Sultan Al-Mamun, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, Stephen Pearton
Publikováno v:
Applied Physics Letters. 121:233502
Strain localization in microelectronic devices commonly arises from device geometry, materials, and fabrication processing. In this study, we controllably relieve the local strain field of AlGaN/GaN HEMTs by milling micro-trenches underneath the chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3460af18f9a18ea9ecfc80342c7692d1
https://doi.org/10.1063/5.0125481
https://doi.org/10.1063/5.0125481
Autor:
Sushrut Modak, James Spencer Lundh, Nahid Sultan Al-Mamun, Leonid Chernyak, Aman Haque, Thieu Quang Tu, Akito Kuramata, Marko J. Tadjer, Stephen J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A. 40:062703
Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cc8e8362c9a228c44838bfcda2d3cee
https://doi.org/10.1116/6.0002115
https://doi.org/10.1116/6.0002115
Publikováno v:
Journal of Vacuum Science & Technology A. 40:053403
Focused Ga+ ion milling of lightly Si-doped, n-type Ga2O3 was performed with 2–30 kV ions at normal incidence and beam currents that were a function of beam voltage, 65 nA for 30 kV, 26 nA for 10 kV, 13 nA for 5 kV, and 7.1 nA for 2 kV, to keep the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::409fa11007e99bc3640c4803d021a496
https://doi.org/10.1116/5.0099892
https://doi.org/10.1116/5.0099892
Autor:
Nahid Sultan Al-Mamun, Maxwell Wetherington, Douglas E. Wolfe, Aman Haque, Fan Ren, Stephen Pearton
Publikováno v:
Microelectronic Engineering. 262:111836
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e974a05a8c154d1f6c90aa952972b12e
https://doi.org/10.1016/j.mee.2022.111836
https://doi.org/10.1016/j.mee.2022.111836