Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nahid Al-Mamun"'
Publikováno v:
ECS Transactions. 109:3-14
In this study, the focused ion beam (FIB) Ga+ irradiation damage on β-Ga2O3 Schottky diode structure under different ion energies were tested, and the effective recovery of diode characteristics after rapid thermal annealing (RTA) post-annealing wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ad945dc3c8a65b87a9cd648297e6ce3
https://doi.org/10.1149/10905.0003ecst
https://doi.org/10.1149/10905.0003ecst
Autor:
Md Abu Jafar Rasel, Nahid Al-Mamun, Sergei Stepanoff, Zahabul Islam, Aman Haque, Douglas Wolfe, Fan Ren, Stephen J Pearton
Publikováno v:
ECS Meeting Abstracts. :1364-1364
Performance and reliability of microelectronic devices are governed by the mechanical strain. Typically, strain engineering implies uniformly distributed strain. However, we offer a different perspective by hypothesizing that very small but localized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3baffb7bcfc313c72e4ad75574fe2908
https://doi.org/10.1149/ma2022-02371364mtgabs
https://doi.org/10.1149/ma2022-02371364mtgabs
Autor:
Xinyi Xia, Jian-Sian Li, Ribhu Sharma, Fan Ren, Md Abu Jafar Rasel, Sergei Stepanoff, Nahid Al-Mamun, Amanul Haque, Douglas Wolfe, Sushrut Modak, Leonid Chernyak, Mark Law, Ani Khachatrian, Stephen J Pearton
Publikováno v:
ECS Meeting Abstracts. :1109-1109
β-Ga2O3 is attractive for high temperature applications in harsh environments that cannot be tolerated by conventional electronics. Its wide bandgap allows operation at elevated temperatures, while it is also radiation hard. Radiation tolerance is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7921a94d8382d633f04207dc8bee9bda
https://doi.org/10.1149/ma2022-02301109mtgabs
https://doi.org/10.1149/ma2022-02301109mtgabs
Autor:
Xinyi Xia, Jian-Sian Li, Ribhu Sharma, Fan Ren, Md Abu Jafar Rasel, Sergei Stepanoff, Nahid Al-Mamun, Aman Haque, Douglas E. Wolfe, Sushrut Modak, Leonid Chernyak, Mark E. Law, Ani Khachatrian, S. J. Pearton
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:095001
We present a review of the published experimental and simulation radiation damage results in Ga2O3. All of the polytypes of Ga2O3 are expected to show similar radiation resistance as GaN and SiC, considering their average bond strengths. However, thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2640e9740aa8ca38905eebb5775759bc
https://doi.org/10.1149/2162-8777/ac8bf7
https://doi.org/10.1149/2162-8777/ac8bf7