Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Nagyong Choi"'
Autor:
Sung Yun Woo, Dongseok Kwon, Nagyong Choi, Won-Mook Kang, Young-Tak Seo, Min-Kyu Park, Jong-Ho Bae, Byung-Gook Park, Jong-Ho Lee
Publikováno v:
IEEE Access, Vol 8, Pp 202639-202647 (2020)
A positive-feedback (PF) neuron device capable of threshold tuning and simultaneously processing excitatory (G±) and inhibitory (G-) signals is experimentally demonstrated to replace conventional neuron circuits, for the first time. Thanks to the PF
Externí odkaz:
https://doaj.org/article/1470e541c27b4b18ab794fd340bcf8d8
Autor:
Young-Tak Seo, Jong-Ho Lee, Won-Mook Kang, Sung Yun Woo, Min-Kyu Park, Byung-Gook Park, Jong-Ho Bae, Nagyong Choi, Dongseok Kwon
Publikováno v:
IEEE Access, Vol 8, Pp 202639-202647 (2020)
A positive-feedback (PF) neuron device capable of threshold tuning and simultaneously processing excitatory (G±) and inhibitory (G-) signals is experimentally demonstrated to replace conventional neuron circuits, for the first time. Thanks to the PF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec962f3afa6b46f4effe8fe3a4f632cd
https://ieeexplore.ieee.org/document/9249234/
https://ieeexplore.ieee.org/document/9249234/
Publikováno v:
IEEE Electron Device Letters. 40:702-705
The effect of band engineering by controlling nitrogen content in the tunneling dielectric of the 3-D NAND flash cells is investigated by comparing various cell properties of the two devices. These measured devices have the same device dimensions and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc8e4ce25461acc50d0e04055af2f11
https://doi.org/10.1109/led.2019.2905299
https://doi.org/10.1109/led.2019.2905299
Publikováno v:
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 19:153-157
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680c717e041a47d69b01a05435f0cf7d
https://doi.org/10.5573/jsts.2019.19.2.153
https://doi.org/10.5573/jsts.2019.19.2.153
Publikováno v:
IEEE Electron Device Letters. 38:867-870
The origin of two different hysteresis pheno- mena observed in a few cells of 3-D NAND flash memory with a tube-type poly-Si body was analyzed. To identify the origin, we analyzed the capture and emission property of charges in two different trap sit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b70266c5096670b11196f65459c7ab8
https://doi.org/10.1109/led.2017.2705721
https://doi.org/10.1109/led.2017.2705721
Autor:
Dongseok Kwon, Nagyong Choi, Sung-Tae Lee, Jong-Ho Lee, Jong-Ho Bae, Hyeongsu Kim, Byung-Gook Park, Suhwan Lim
Publikováno v:
Journal of nanoscience and nanotechnology. 20(7)
NAND flash memory which is mature technology has great advantage in high density and great storage capacity per chip because cells are connected in series between a bit-line and a source-line. Therefore, NAND flash cell can be used as a synaptic devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a9d33a57fd0c74d2818fae9ab09d0b5
https://pubmed.ncbi.nlm.nih.gov/31968431
https://pubmed.ncbi.nlm.nih.gov/31968431
Autor:
Hyeongsu Kim, Suhwan Lim, Jong-Ho Lee, Nagyong Choi, Jong-Ho Bae, Byung-Gook Park, Sung-Tae Lee, Dongseok Kwon
Publikováno v:
2019 China Semiconductor Technology International Conference (CSTIC).
Hardware-based neural networks are expected to be a new computing breakthrough beyond conventional von Neumann architecture because of their low power operations. In this work, we investigate input voltage scheme for feedforward neural networks using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8a821c33874e3b17c5a3f6fb01356de
https://doi.org/10.1109/cstic.2019.8755691
https://doi.org/10.1109/cstic.2019.8755691
Publikováno v:
IEEE Transactions on Electron Devices. 63:1533-1538
A positive feedback (PF) mechanism was adopted for the first time in the cell string of a 3-D NAND flash memory where n + and p + regions are formed on both ends of the string to implement a diode-type cell string. The body consists of a tube-type po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14488230b24571ce47d0a43b5bc7380d
https://doi.org/10.1109/ted.2016.2533019
https://doi.org/10.1109/ted.2016.2533019
Autor:
Chul-Heung Kim, Soochang Lee, Jong-Ho Lee, Dong Hwan Lee, Suhwan Lim, Nagyong Choi, Jong-Ho Bae, Byung-Gook Park, Tackhwi Lee, S.-C. Chung, Sung-Tae Lee
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
Four synaptic devices are introduced for spiking neural networks (SNNs) and deep neural networks (DNNs). Unsupervised learning is successfully demonstrated by applying the STDP learning rule reflecting the LTP/LTD characteristics of the fabricated TF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deddf0ae5d5932617479f8cd91434126
https://doi.org/10.1109/vlsit.2018.8510667
https://doi.org/10.1109/vlsit.2018.8510667
Autor:
Byung-Gook Park, Tackhwi Lee, Jong-Ho Bae, Dong Hwan Lee, Ho-Jung Kang, Nagyong Choi, Jong-Ho Lee, S.-C. Chung
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
A new space program (PGM) scheme is proposed to achieve reliable triple-level-cell (TLC) 3-D NAND flash memory. Considering the lateral diffusion issue of stored electrons in the nitride storage layer, the proposed scheme stores electrons in the nitr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43ce0bab5034578029fe36605ed01e1a
https://doi.org/10.1109/vlsit.2018.8510660
https://doi.org/10.1109/vlsit.2018.8510660