A 50-GHz 0.25-/spl mu/m implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs.

Autor: Yih-Feng Chyan, Carroll, M.S., Ivanov, T.G., Chen, A.S., Nagy, W.J., Chaudhry, S., Dail, R.W., Archer, V.D., Ng, K.K., Martin, S., Minseok Oh, Frei, M.R., Kizilyalli, I.C., Huang, R.Y., Thoma, M.J., King, C.A., Cochran, W.T., Lee, K.H.

Publikováno v: Proceedings of the 1998 Bipolar/BiCMOS Circuits & Technology Meeting (Cat No98CH36198); 1998, p128-131, 4p

Scaling studies of CMOS SRAM soft-error tolerances—From 16K to 256K.

Autor: Fu, J.S., Lee, K.H., Koga, R., Hewlett, F.W., Flores, R., Anderson, R.E., Desko, J.C., Nagy, W.J., Shimer, J.A., Kohler, R.A., Steenwyk, S.D.

Publikováno v: 1987 International Electron Devices Meeting; 1987, p540-543, 4p

A computationally efficient technique to extract diffused profiles and three dimensional collector resistances of high energy implanted bipolar devices.

Autor: Chaudhry, S., Chyan, Y.F., Carroll, M.S., Chen, A.S., Nagy, W.J., Lee, J.L., Layman, P.A., Stevie, F.A., Rafferty, C.S., Vuong, H.H.

Publikováno v: SISPAD '97 1997 International Conference on Simulation of Semiconductor Processes & Devices Technical Digest; 1997, p257-259, 3p

A 50-GHz 0.25-/spl mu/m high-energy implanted BiCMOS (HEIBiC) technology for Low-Power high-integration wireless-communication systems.

Autor: Yih-Feng Chyan, Ivanov, T.G., Carroll, M.S., Nagy, W.J., Chen, A.S., Lee, K.H.

Publikováno v: 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat No98CH36216); 1998, p92-93, 2p

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.