Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Nagaraju Balabenkata Subramanyam"'
Publikováno v:
Materials Today: Proceedings. 23:309-316
In the present work, semi - insulating GaAs samples implanted with 50 keV silicon negative ions with fluences varying from 1 x 1014 to 1 x 1016 ions cm-2 have been investigated using scanning electron microscopy, atomic force microscopy and X-ray dif
Publikováno v:
International Journal of Nanoscience. 19:1950019
Gallium arsenide (GaAs) implanted with silicon forming intersubband of SiGaAs is a promising material for making novel electronic and optoelectronic devices. This paper is focused on finding optimum fluence condition for formation of intersubband of
Autor:
Reetuparna Ghosh, Bioletty Mary Lawriniang, Arun Agarwal, A. Goswami, Nagaraju Balabenkata Subramanyam, Amit Kumar Gupta, Vijay Pal Singh, Sylvia Badwar, Vibha Vansola, Sudir Shibaji Pol, Haladhara Naik, Betylda Jyrwa, Yeshwant Naik, P.K. Singh, Chandra Shekhar Datrik
Publikováno v:
Journal of the Korean Physical Society. 67:441-447
The 115In(n,γ)116m In reaction cross section at neutron energies of 1.12, 2.12, 3.12 and 4.12 MeV was determined by using an activation and off-line γ-ray spectrometric technique. The monoenergetic neutron energies of 1.12 − 4.12 MeV were generat