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pro vyhledávání: '"Nagai, Hiromu"'
Autor:
Liang, Jianbo, Nagai, Hiromu, Cheng, Zhe, Kawamura, Keisuke, Shimizu, Yasuo, Ohno, Yutaka, Sakaida, Yoshiki, Uratani, Hiroki, Yoshida, Hideto, Nagai, Yasuyoshi, Shigekawa, Naoteru
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one order of mag
Externí odkaz:
http://arxiv.org/abs/2209.05669
