Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Nagahiro, Koji"'
Autor:
Tsutsui, Kazuo, Shiozawa, Takashi, Nagahiro, Koji, Ohishi, Yoshihisa, Kakushima, Kuniyuki, Ahmet, Parhat, Urushihara, Nobuyuki, Suzuki, Mineharu, Iwai, Hiroshi
Publikováno v:
In Microelectronic Engineering 2008 85(10):2000-2004
Autor:
Ahmet, Parhat, Shiozawa, Takashi, Nagahiro, Koji, Nagata, Takahiro, Kakushima, Kuniyuki, Tsutsui, Kazuo, Chikyow, Toyohiro, Iwai, Hiroshi
Publikováno v:
In Microelectronic Engineering 2008 85(7):1642-1646
Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi 2
Autor:
Tsutsui, Kazuo, Xiang, Ruifei, Nagahiro, Koji, Shiozawa, Takashi, Ahmet, Parhat, Okuno, Yasutoshi, Matsumoto, Michikazu, Kubota, Masafumi, Kakushima, Kuniyuki, Iwai, Hiroshi
Publikováno v:
In Microelectronic Engineering 2008 85(2):315-319
Autor:
Tsutsui, Kazuo, Shiozawa, Takashi, Nagahiro, Koji, Ohishi, Yoshihisa, Kakushima, Kuniyuki, Ahmet, Parhat, Urushihara, Nobuaki, Suzuki, Mineharu, Iwai, Hiroshi
Publikováno v:
ECS Transactions; October 2008, Vol. 13 Issue: 1 p413-419, 7p
Autor:
Tsutsui, Kazuo, Nagahiro, Koji, Shiozawa, Takashi, Ahmet, Parhat, Kakushima, Kuniyuki, Iwai, Hiroshi
Publikováno v:
ECS Transactions; September 2007, Vol. 11 Issue: 6 p207-213, 7p
Autor:
Tsutsui, Kazuo1 ktsutsui@ep.titech.ac.jp, Shiozawa, Takashi2, Nagahiro, Koji2, Ohishi, Yoshihisa2, Kakushima, Kuniyuki1, Ahmet, Parhat2, Urushihara, Nobuyuki3, Suzuki, Mineharu3, Iwai, Hiroshi2
Publikováno v:
Microelectronic Engineering. Oct2008, Vol. 85 Issue 10, p2000-2004. 5p.
Autor:
Ahmet, Parhat1 parhat@ep.titech.ac.jp, Shiozawa, Takashi1, Nagahiro, Koji1, Nagata, Takahiro2, Kakushima, Kuniyuki3, Tsutsui, Kazuo3, Chikyow, Toyohiro2, Iwai, Hiroshi1
Publikováno v:
Microelectronic Engineering. Jul2008, Vol. 85 Issue 7, p1642-1646. 5p.