Zobrazeno 1 - 10
of 346
pro vyhledávání: '"Naeemi, Azad"'
In this paper we present a comprehensive design and benchmarking study of Content Addressable Memory (CAM) at the 7nm technology node in the context of similarity search applications. We design CAM cells based on SRAM, spin-orbit torque, and ferroele
Externí odkaz:
http://arxiv.org/abs/2403.15328
Autor:
Finocchio, Giovanni, Incorvia, Jean Anne C., Friedman, Joseph S., Yang, Qu, Giordano, Anna, Grollier, Julie, Yang, Hyunsoo, Ciubotaru, Florin, Chumak, Andrii, Naeemi, Azad J., Cotofana, Sorin D., Tomasello, Riccardo, Panagopoulos, Christos, Carpentieri, Mario, Lin, Peng, Pan, Gang, Yang, J. Joshua, Todri-Sanial, Aida, Boschetto, Gabriele, Makasheva, Kremena, Sangwan, Vinod K., Trivedi, Amit Ranjan, Hersam, Mark C., Camsari, Kerem Y., McMahon, Peter L., Datta, Supriyo, Koiller, Belita, Aguilar, Gabriel H., Temporão, Guilherme P., Rodrigues, Davi R., Sunada, Satoshi, Everschor-Sitte, Karin, Tatsumura, Kosuke, Goto, Hayato, Puliafito, Vito, Åkerman, Johan, Takesue, Hiroki, Di Ventra, Massimiliano, Pershin, Yuriy V., Mukhopadhyay, Saibal, Roy, Kaushik, Wang, I-Ting, Kang, Wang, Zhu, Yao, Kaushik, Brajesh Kumar, Hasler, Jennifer, Ganguly, Samiran, Ghosh, Avik W., Levy, William, Roychowdhury, Vwani, Bandyopadhyay, Supriyo
Publikováno v:
Nano Futures (2024)
In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in ener
Externí odkaz:
http://arxiv.org/abs/2301.06727
Autor:
Seskir, Zeki C., Migdał, Piotr, Weidner, Carrie, Anupam, Aditya, Case, Nicky, Davis, Noah, Decaroli, Chiara, Ercan, İlke, Foti, Caterina, Gora, Paweł, Jankiewicz, Klementyna, La Cour, Brian R., Malo, Jorge Yago, Maniscalco, Sabrina, Naeemi, Azad, Nita, Laurentiu, Parvin, Nassim, Scafirimuto, Fabio, Sherson, Jacob F., Surer, Elif, Wootton, James, Yeh, Lia, Zabello, Olga, Chiofalo, Marilù
Publikováno v:
Optical Engineering, 61(8), 081809 (2022)
In this article, we provide an extensive overview of a wide range of quantum games and interactive tools that have been employed by the community in recent years. The paper presents selected tools, as described by their developers. The list includes
Externí odkaz:
http://arxiv.org/abs/2202.07756
Autor:
Li, Hai, Nikonov, Dmitri E., Lin, Chia-Ching, Camsari, Kerem, Liao, Yu-Ching, Hsu, Chia-Sheng, Naeemi, Azad, Young, Ian A.
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits (2022)
Spintronic devices are a promising beyond-CMOS device option thanks to their energy efficiency and compatibility with CMOS. To accurately capture their multi-physics dynamics, a rigorous treatment of both spin and charge and their inter-conversion is
Externí odkaz:
http://arxiv.org/abs/2110.10890
Publikováno v:
Phys. Rev. Applied 15, 034048 (2021)
The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devices and thus has been of great interest in technology and science in t
Externí odkaz:
http://arxiv.org/abs/2012.02691
Autor:
Liao, Yu-Ching, Nikonov, Dmitri E., Dutta, Sourav, Chang, Sou-Chi, Hsu, Chia-Sheng, Young, Ian A., Naeemi, Azad
The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental results. The lower limit of the magnetic order response time of CoFe in
Externí odkaz:
http://arxiv.org/abs/2004.08453
Autor:
Li, Xiang, Lin, Shy-Jay, DC, Mahendra, Liao, Yu-Ching, Yao, Chengyang, Naeemi, Azad, Tsai, Wilman, Wang, Shan X.
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is critical to analyze the magnetic tunnel junction (MTJ) properties neede
Externí odkaz:
http://arxiv.org/abs/2004.06268
Autor:
Zhang, Delin, Bapna, Mukund, Jiang, Wei, de Sousa, Duarte Pereira, Liao, Yu-Ching, Zhao, Zhengyang, Lv, Yang, Sahu, Protyush, Lyu, Deyuan, Naeemi, Azad, Low, Tony, Majetich, Sara A, Wang, Jian-Ping
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of ferroma
Externí odkaz:
http://arxiv.org/abs/1912.10289
In this paper, the multi-domain nature of ferroelectric (FE) polarization switching dynamics in a metal-ferroelectric-metal (MFM) capacitor is explored through a physics-based phase field approach, where the three-dimensional time-dependent Ginzburg-
Externí odkaz:
http://arxiv.org/abs/1912.08933