Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Nae Bong Jeong"'
Autor:
Jun-Ho Lee, Dong Hoon Shin, Heejun Yang, Nae Bong Jeong, Do-Hyun Park, Kenji Watanabe, Takashi Taniguchi, Eunah Kim, Sang Wook Lee, Sung Ho Jhang, Bae Ho Park, Young Kuk, Hyun-Jong Chung
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
In field-effect transistors, a semiconducting channel is indispensable for device switching. Here, the authors demonstrate semiconductor-less switching via modulation of the field emission barrier height across a graphene-hBN interface with ON/OFF ra
Externí odkaz:
https://doaj.org/article/dd997389662f44b2b26805244fef5d8e
Autor:
Jun-Ho Lee, Inchul Choi, Nae Bong Jeong, Minjeong Kim, Jaeho Yu, Sung Ho Jhang, Hyun-Jong Chung
Publikováno v:
Nanomaterials, Vol 12, Iss 17, p 3029 (2022)
We investigated the tunneling of graphene/insulator/metal heterojunctions by revising the Tsu–Esaki model of Fowler–Nordheim tunneling and direct tunneling current. Notably, the revised equations for both tunneling currents are proportional to V3
Externí odkaz:
https://doaj.org/article/b018656e7b6043fc823b95efbe85a463
Autor:
Dong Hoon Shin, Eunah Kim, Takashi Taniguchi, Kenji Watanabe, Sangwook Lee, Do Hyun Park, Jun-Ho Lee, Sung Ho Jhang, Nae Bong Jeong, Hyun-Jong Chung, Young Kuk, Bae Ho Park, Heejun Yang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
Semiconductors have long been perceived as a prerequisite for solid-state transistors. Although switching principles for nanometer-scale devices have emerged based on the deployment of two-dimensional (2D) van der Waals heterostructures, tunneling an
Publikováno v:
Current Applied Physics. 20:1190-1194
A high-speed residue-free transfer method using PDMS (polydimethylsiloxane) stamp and water infiltration between graphene and a hydrophilic surface is reported. Monolayer graphene was transferred from an enhanced fluorinated Al2O3 surface using PDMS.
Publikováno v:
Advanced Electronic Materials. 8:2200761
Autor:
Jun-Ho, Lee, Dong Hoon, Shin, Heejun, Yang, Nae Bong, Jeong, Do-Hyun, Park, Kenji, Watanabe, Takashi, Taniguchi, Eunah, Kim, Sang Wook, Lee, Sung Ho, Jhang, Bae Ho, Park, Young, Kuk, Hyun-Jong, Chung
Publikováno v:
Nature Communications
Semiconductors have long been perceived as a prerequisite for solid-state transistors. Although switching principles for nanometer-scale devices have emerged based on the deployment of two-dimensional (2D) van der Waals heterostructures, tunneling an
Publikováno v:
New Physics: Sae Mulli. 66:1201-1209