Thermal Resistance Modeling for the Optimal Design of EE and E/PLT Core-Based Planar Magnetics

Autor: Reda Bakri, Xavier Margueron, Philippe Le Moigne, Nadir Idir

Publikováno v: Energies, Vol 17, Iss 11, p 2755 (2024)

With the integration of power electronic converters and components, an accurate thermal design becomes essential. Hence, precise thermal models for components are needed for their optimal design. This paper focuses on the development of an analytical

Externí odkaz: https://doaj.org/article/c713f81823cf44eb9e8126d43ccacc09

Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations

Autor: Loris Pace, Nadir Idir, Thierry Duquesne, Jean-Claude De Jaeger

Publikováno v: Energies, Vol 14, Iss 5, p 1495 (2021)

Due to the high switching speed of Gallium Nitride (GaN) transistors, parasitic inductances have significant impacts on power losses and electromagnetic interferences (EMI) in GaN-based power converters. Thus, the proper design of high-frequency conv

Externí odkaz: https://doaj.org/article/d968d7e3f59e402c9f3311bf1d000a6a

Modeling and Minimization of the Parasitic Capacitances of Single-Layer Toroidal Inductors

Autor: Florentin Salomez, Arnaud Videt, Nadir Idir

Publikováno v: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, 2022, IEEE Transactions on Power Electronics, 37 (10), pp.12426-12436. ⟨10.1109/tpel.2022.3177642⟩

International audience; High-frequency power converters need electromagnetic interferences filters using common and differential mode chokes with low parasitic capacitance to comply with the electromagnetic compatibility standards. This article propo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6fb9d84d82ef8e5e069eda378340bba9
https://hal.univ-lille.fr/hal-03865502

Design Method of PCB Inductors for High-Frequency GaN Converters

Autor: Nadir Idir, Ammar Chafi, Arnaud Videt, Hassan Maher

Publikováno v: IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2021, 36 (1), pp.805-814. ⟨10.1109/TPEL.2020.3000438⟩
IEEE Transactions on Power Electronics, 2020, 36 (1), pp.805-814. ⟨10.1109/TPEL.2020.3000438⟩

International audience; The new power Gallium Nitride transistors allow to increase the operating frequency of converters to megahertz range, thanks to their low switching time that is of a few nanoseconds or less. This permits to reduce the values a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fc2bfd13c4315418a6b7cf4113d6844
https://doi.org/10.1109/tpel.2020.3000438

Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

Autor: Nadir Idir, Bruno Allard, Jean-François Mogniotte, M. L. Beye, Thilini Wickramasinghe, Hassan Maher, Luong Viet Phung

Publikováno v: Electronics
Electronics, 2021, 10 (2), pp.106. ⟨10.3390/electronics10020106⟩
Volume 10
Issue 2
Electronics, Penton Publishing Inc., 2021, 10 (2), pp.106. ⟨10.3390/electronics10020106⟩
Electronics, Vol 10, Iss 106, p 106 (2021)

International audience; The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for impro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4596dcaff8bd7d2bdfe62736ffffa132
https://hal.science/hal-03341258/file/electronics-10-00106.pdf