Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Nadir Dagli"'
Autor:
Jhonattan C. Ramirez, Nadir Dagli
Publikováno v:
Conference on Lasers and Electro-Optics.
We report design, fabrication, and characterization of an electro-optical waveguide with embedded double-layer graphene capacitor. Optical absorption change of 15 dB/(cm-V) over 1546-1556 nm wavelength range was demonstrated based on the electrical F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc1535122c6adcd42fa62da4290fd121
https://doi.org/10.1364/cleo_si.2021.sth4b.4
https://doi.org/10.1364/cleo_si.2021.sth4b.4
Publikováno v:
Journal of Lightwave Technology, vol 38, iss 8
JOURNAL OF LIGHTWAVE TECHNOLOGY, vol 38, iss 8
JOURNAL OF LIGHTWAVE TECHNOLOGY, vol 38, iss 8
AlGaAs bulk electro-optic Mach–Zehnder modulators with low ${V_\pi }$ are reported. Epilayer design is an npin , which is shown to be equivalent to a pin . Measured ${V_\pi }$ is 1 V for 1 cm long electrode and this result agrees very well with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d66aee0b569ca1e30bee08fb9fcd482f
https://escholarship.org/uc/item/5tt3g7cf
https://escholarship.org/uc/item/5tt3g7cf
Publikováno v:
OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF).
Traveling wave GaAs/AlGaAs modulators in epilayers directly grown on silicon are reported. Electrode is a loaded microstrip line shielding microwave fields from silicon substrate. Modulation bandwidth is 18.5 GHz with 1.5V-cm V π -L product.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::398bce3efb40a070c6a171b5242b0a17
https://doi.org/10.1364/iprsn.2020.itu1a.3
https://doi.org/10.1364/iprsn.2020.itu1a.3
Publikováno v:
Journal of Lightwave Technology. 36:4205-4210
We report for the first-time electro-optic phase and amplitude modulators in GaAs/AlGaAs epitaxial layers grown on misaligned silicon substrates containing germanium buffer layers. Epilayer has a npin doping profile and is equivalent to a pin diode.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb44fdc19acbf983aa95b119cea55fb
https://doi.org/10.1109/jlt.2018.2863208
https://doi.org/10.1109/jlt.2018.2863208
Publikováno v:
Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb3725e82c94e18fb33a014935b9fbb1
https://doi.org/10.1364/cleo_si.2019.sth3n.7
https://doi.org/10.1364/cleo_si.2019.sth3n.7
Publikováno v:
2018 IEEE Photonics Conference (IPC).
Amorphous silicon waveguides were integrated with substrate removed InAlGaAs/InAlAs multi quantum well waveguides in electro-optic modulators. Transitions efficiency between these waveguides is 95%. Modulation efficiency of MZMs is 0.165 V-cm.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b530da6938de12d37799a8747535fbc9
https://doi.org/10.1109/ipcon.2018.8527092
https://doi.org/10.1109/ipcon.2018.8527092
Intensity and Phase Modulators at 1.55 μm with InAs/InGaAs Quantum Dots Epitaxially Grown on Silicon
Publikováno v:
CLEO Pacific Rim Conference.
InAs quantum dot core electro-optic modulators are fabricated on (100) silicon substrates opening up large-scale III-V photonic integration. Mach-Zehnder modulator with 8 mm long electrode has 2.2V $V \pi$ and less than 3 dB/cm propagation loss.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8adbbae89617e61b281e90ab19dcdcf7
https://doi.org/10.1364/cleopr.2018.th2j.3
https://doi.org/10.1364/cleopr.2018.th2j.3
Publikováno v:
Advanced Photonics 2018 (BGPP, IPR, NP, NOMA, Sensors, Networks, SPPCom, SOF).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb837deb74ec4d8a91624b67e9b6029f
https://doi.org/10.1364/iprsn.2018.iw3b.4
https://doi.org/10.1364/iprsn.2018.iw3b.4
Autor:
Nadir Dagli
Publikováno v:
Handbook of Optoelectronics ISBN: 9781315157009
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2eeb44ba69719fa33e623394f53a5c
https://doi.org/10.1201/9781315157009-14
https://doi.org/10.1201/9781315157009-14
Publikováno v:
Frontiers in Optics 2017.
We report for the first time electro-optic phase and amplitude modulators in GaAs/AlGaAs epitaxial layers grown on Si substrates. Intensity modulators with 4-mm long electrodes have Vπ of 3.59V corresponding to 1.44 V-cm modulation efficiency.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::917e24e0194c73e56fa4bebbb87561d8
https://doi.org/10.1364/fio.2017.fth4a.3
https://doi.org/10.1364/fio.2017.fth4a.3