Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Nadine Geyer"'
Publikováno v:
ACS Applied Materials & Interfaces. 5:4302-4308
The charge transport mechanism during metal-assisted chemical etching of Si nanowires with contiguous metal films has been investigated. The experiments give a better insight how the charges and reaction products can penetrate to the etching front. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddcacc3054b4baf99983d90da2109e04
https://doi.org/10.1021/am400510f
https://doi.org/10.1021/am400510f
Autor:
Hartmut S. Leipner, Peter Werner, Nadine Geyer, Bodo Fuhrmann, Johannes de Boor, Zhipeng Huang
Publikováno v:
The Journal of Physical Chemistry C. 116:13446-13451
Metal-assisted chemical etching is a relatively new top-down approach allowing a highly controlled and precise fabrication of Si and Si/Ge superlattice nanowires. It is a simple method with the ability to tailor diverse nanowire parameters like diame
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a80d1d34409ae6c3be8b45096a9bb58
https://doi.org/10.1021/jp3034227
https://doi.org/10.1021/jp3034227
Publikováno v:
Advanced Materials. 23:285-308
This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00791f1cd2486b0540dfcf5beb202ac6
https://doi.org/10.1002/adma.201001784
https://doi.org/10.1002/adma.201001784
Publikováno v:
The Journal of Physical Chemistry C. 114:10683-10690
Assisted by noble metal particles, non-(100) Si substrates were etched in solutions with different oxidant concentrations at different temperatures. The etching directions of (110) and (111) Si substrates are found to be influenced by the concentrati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::126dcd64d462bb5fa4ac77ac739bc139
https://doi.org/10.1021/jp911121q
https://doi.org/10.1021/jp911121q
Autor:
Seref Kalem, T.K. Nguyen-Duc, U. Gösele, Peter Werner, W. Erfurth, Manfred Reiche, P. Das Kanungo, Nadine Geyer, Horst Blumtritt, Nikolai Zakharov, A. Wolfsteller
Publikováno v:
Thin Solid Films. 518:2555-2561
Silicon nanowires (NWs) and vertical nanowire-based Si/Ge heterostructures are expected to be building blocks for future devices, e.g. field-effect transistors or thermoelectric elements. In principle two approaches can be applied to synthesise these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31b56e8f421d20f6ec8108d372bf79e5
https://doi.org/10.1016/j.tsf.2009.08.021
https://doi.org/10.1016/j.tsf.2009.08.021
Autor:
Woo Lee, Zhipeng Huang, Tomohiro Shimizu, Ulrich Gösele, Zhang Zhang, Xuanxiong Zhang, Stephan Senz, Nadine Geyer
Publikováno v:
Nano Letters. 9:2519-2525
The metal-assisted etching direction of Si(110) substrates was found to be dependent upon the morphology of the deposited metal catalyst. The etching direction of a Si(110) substrate was found to be one of the two crystallographically preferred 100 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4805b109424d9843fd377bd6c934aa5
https://doi.org/10.1021/nl803558n
https://doi.org/10.1021/nl803558n
Publikováno v:
physica status solidi c. 6:690-695
We report on both the fabrication of hexagonally ordered, vertically aligned silicon nanowires (SiNW) and their characterization by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24f6880b2209f708a34cf0db29c1db1
https://doi.org/10.1002/pssc.200880716
https://doi.org/10.1002/pssc.200880716
Publikováno v:
Vacuum. 86:1232-1234
We report on the fabrication of hexagonally ordered, sub-wavelength hole arrays (SWHA) by colloidal lithography combined with reactive ion etching and a lift-off process, and their characterization with scanning electron microscopy and ellipsometry.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70ccf5cc76530aa62a1c9e265088e7bf
https://doi.org/10.1016/j.vacuum.2011.04.009
https://doi.org/10.1016/j.vacuum.2011.04.009
Publikováno v:
Applied Physics A. 95:325-327
We report on the characterization of hexagonally ordered, vertically aligned silicon nanowires (SiNW) by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching arrays of SiNW o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c5332a7b3351c6dea069f89cff1c957
https://doi.org/10.1007/s00339-009-5101-x
https://doi.org/10.1007/s00339-009-5101-x
Publikováno v:
MRS Proceedings. 1408
The selective formation of porous silicon in nanowires is observed in Si/Ge epitaxial layers along Ge layers grown by molecular beam epitaxy on a Si(100) substrate after metal-assisted chemical etching in aqueous HF-H2O2 solution. We assume that Ge l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c64e31e84913c67fb43c7e6677d7bca6
https://doi.org/10.1557/opl.2012.727
https://doi.org/10.1557/opl.2012.727