Zobrazeno 1 - 10
of 583
pro vyhledávání: '"Nadine Collaert"'
Autor:
Barry O’Sullivan, Aarti Rathi, Alireza Alian, Sachin Yadav, Hao Yu, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, Bertrand Parvais, Adrian Chasin, Nadine Collaert
Publikováno v:
Micromachines, Vol 15, Iss 8, p 951 (2024)
For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state con
Externí odkaz:
https://doaj.org/article/95d5c2543378425ebf982122f14117f1
Autor:
Devin Verreck, Anne S. Verhulst, Yang Xiang, Dmitry Yakimets, Salim El Kazzi, Bertrand Parvais, Guido Groeseneken, Nadine Collaert, Anda Mocuta
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 658-663 (2018)
Dopant pockets in combination with a III-V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable on-currents (ION) and to break the ION-subthreshold swing trade-off in pTFETs. Questions on
Externí odkaz:
https://doaj.org/article/709d3d9d18f44de7bb0fffa8ea46a664
Autor:
Yida Li, Alireza Alian, Maheswari Sivan, Li Huang, Kah Wee Ang, Dennis Lin, Dan Mocuta, Nadine Collaert, Aaron V.-Y. Thean
Publikováno v:
APL Materials, Vol 7, Iss 3, Pp 031503-031503-8 (2019)
An ultra-thin (15 nm) InGaAs nanomembrane field-effect phototransistor is transferred entirely from a rigid InP substrate onto a flexible SU-8 on a polydimethylsiloxane substrate. The transferred InGaAs device exhibits wide-band spectral response tun
Externí odkaz:
https://doaj.org/article/f77f7facc024464f890d9e1b54183d83
Autor:
Montserrat Nafria, Nadine Collaert
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 953-954 (2018)
The papers in this special section were presented at the 2017 European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://doaj.org/article/021b8ef3204f428d95cbef7741c308a7
Autor:
Nadine Collaert
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 6, Iss 2, p 9 (2016)
In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for PMOS and In(Ga)As for NMOS, the benefits and challenges of integrating these materials on a Si platform will be
Externí odkaz:
https://doaj.org/article/f4488b04e2044aa087457cc942fa9709
Autor:
Bernardette Kunert, Yves Mols, Reynald Alcotte, Peter Swekis, Sachin Yadav, Abhitosh Vais, Annie Kumar, Guillaume Boccardi, Robert Langer, Bertrand Parvais, Nadine Collaert
Publikováno v:
ECS Transactions. 111:105-116
The power amplifier (PA) in an RF front-end module operating above 100 GHz required for 6G wireless networks is the most power-hungry device circuit component. In that respect, InP-based heterojunction bipolar transistors (HBT) clearly outperform oth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a39d1100d8d34b4a7c372eaa245e4727
https://doi.org/10.1149/11101.0105ecst
https://doi.org/10.1149/11101.0105ecst
Autor:
Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais
Publikováno v:
International Journal of Microwave and Wireless Technologies. :1-10
Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX increase. In this paper, we report the linearity trade-offs associated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1818d30abc50bfe30e677ad6efee0b49
https://doi.org/10.1017/s1759078722001428
https://doi.org/10.1017/s1759078722001428
Publikováno v:
MRS Advances. 7:1274-1278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c37c75e906af739d29f1e3d99af48f
https://doi.org/10.1557/s43580-022-00453-6
https://doi.org/10.1557/s43580-022-00453-6
Autor:
Zhicheng Wu, Jacopo Franco, Anne Vandooren, Hiroaki Arimura, Lars-Ake Ragnarsson, Philippe Roussel, Ben Kaczer, Dimitri Linten, Nadine Collaert, Guido Groeseneken
Publikováno v:
IEEE Transactions on Electron Devices. 69:915-921
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373894dfbd4ac69b6c7f2d5d50ef012d
https://doi.org/10.1109/ted.2022.3141983
https://doi.org/10.1109/ted.2022.3141983
Autor:
Alireza Alian, Nadine Collaert, Hao Yu, Bertrand Parvais, Uthayasankaran Peralagu, Niamh Waldron, Ming Zhao
Publikováno v:
IEEE Transactions on Electron Devices. 68:5559-5564
We extract an AlGaN surface state spectrum with a density ( ${D}_{\text{SS}}$ ) ranging between $1.4\times10$ 12 and $4.7\times10$ 12 eV−1cm−2. The low ${D}_{\text{SS}}$ is achieved with in situ SiN passivation. ${D}_{\text{SS}}$ is extracted fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d065e922f281a60e6ca9f8e63b907b
https://doi.org/10.1109/ted.2021.3115086
https://doi.org/10.1109/ted.2021.3115086