Zobrazeno 1 - 10
of 763
pro vyhledávání: '"Nadine Collaert"'
Autor:
Barry O’Sullivan, Aarti Rathi, Alireza Alian, Sachin Yadav, Hao Yu, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, Bertrand Parvais, Adrian Chasin, Nadine Collaert
Publikováno v:
Micromachines, Vol 15, Iss 8, p 951 (2024)
For operation as power amplifiers in RF applications, high electron mobility transistor (HEMT) structures are subjected to a range of bias conditions, applied at both the gate and drain terminals, as the device is biased from the OFF- to ON-state con
Externí odkaz:
https://doaj.org/article/95d5c2543378425ebf982122f14117f1
Autor:
Bernardette Kunert, Yves Mols, Reynald Alcotte, Peter Swekis, Sachin Yadav, Abhitosh Vais, Annie Kumar, Guillaume Boccardi, Robert Langer, Bertrand Parvais, Nadine Collaert
Publikováno v:
ECS Transactions. 111:105-116
The power amplifier (PA) in an RF front-end module operating above 100 GHz required for 6G wireless networks is the most power-hungry device circuit component. In that respect, InP-based heterojunction bipolar transistors (HBT) clearly outperform oth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a39d1100d8d34b4a7c372eaa245e4727
https://doi.org/10.1149/11101.0105ecst
https://doi.org/10.1149/11101.0105ecst
Autor:
Rana ElKashlan, Ahmad Khaled, Raul Rodriguez, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais
Publikováno v:
International Journal of Microwave and Wireless Technologies. :1-10
Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX increase. In this paper, we report the linearity trade-offs associated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1818d30abc50bfe30e677ad6efee0b49
https://doi.org/10.1017/s1759078722001428
https://doi.org/10.1017/s1759078722001428
Autor:
Devin Verreck, Anne S. Verhulst, Yang Xiang, Dmitry Yakimets, Salim El Kazzi, Bertrand Parvais, Guido Groeseneken, Nadine Collaert, Anda Mocuta
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 658-663 (2018)
Dopant pockets in combination with a III-V heterostructure have become a staple in simulations of tunnel field-effect transistors (TFET) to achieve acceptable on-currents (ION) and to break the ION-subthreshold swing trade-off in pTFETs. Questions on
Externí odkaz:
https://doaj.org/article/709d3d9d18f44de7bb0fffa8ea46a664
Publikováno v:
MRS Advances. 7:1274-1278
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c37c75e906af739d29f1e3d99af48f
https://doi.org/10.1557/s43580-022-00453-6
https://doi.org/10.1557/s43580-022-00453-6
Autor:
Yida Li, Alireza Alian, Maheswari Sivan, Li Huang, Kah Wee Ang, Dennis Lin, Dan Mocuta, Nadine Collaert, Aaron V.-Y. Thean
Publikováno v:
APL Materials, Vol 7, Iss 3, Pp 031503-031503-8 (2019)
An ultra-thin (15 nm) InGaAs nanomembrane field-effect phototransistor is transferred entirely from a rigid InP substrate onto a flexible SU-8 on a polydimethylsiloxane substrate. The transferred InGaAs device exhibits wide-band spectral response tun
Externí odkaz:
https://doaj.org/article/f77f7facc024464f890d9e1b54183d83
Autor:
Zhicheng Wu, Jacopo Franco, Anne Vandooren, Hiroaki Arimura, Lars-Ake Ragnarsson, Philippe Roussel, Ben Kaczer, Dimitri Linten, Nadine Collaert, Guido Groeseneken
Publikováno v:
IEEE Transactions on Electron Devices. 69:915-921
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373894dfbd4ac69b6c7f2d5d50ef012d
https://doi.org/10.1109/ted.2022.3141983
https://doi.org/10.1109/ted.2022.3141983
Autor:
Alireza Alian, Nadine Collaert, Hao Yu, Bertrand Parvais, Uthayasankaran Peralagu, Niamh Waldron, Ming Zhao
Publikováno v:
IEEE Transactions on Electron Devices. 68:5559-5564
We extract an AlGaN surface state spectrum with a density ( ${D}_{\text{SS}}$ ) ranging between $1.4\times10$ 12 and $4.7\times10$ 12 eV−1cm−2. The low ${D}_{\text{SS}}$ is achieved with in situ SiN passivation. ${D}_{\text{SS}}$ is extracted fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d065e922f281a60e6ca9f8e63b907b
https://doi.org/10.1109/ted.2021.3115086
https://doi.org/10.1109/ted.2021.3115086
Autor:
Nadine Collaert
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64d6037243df65dd5f2ba19ce5b2b3c5
https://doi.org/10.1007/978-3-030-79827-7_7
https://doi.org/10.1007/978-3-030-79827-7_7
This letter presents a D -band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB bandwidth greater than 20 GHz (120–140 GHz), and a measured noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64a6016da7c973a978a98438eea3f1f0
https://hdl.handle.net/20.500.14017/90377d17-e55e-4464-9c30-1ae28ad4d36e
https://hdl.handle.net/20.500.14017/90377d17-e55e-4464-9c30-1ae28ad4d36e