Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Nadim F. Haddad"'
Autor:
Jason F. Ross, Ashok Raman, Nadim F. Haddad, John C. Rodgers, Lloyd W. Massengill, Ronald D. Schrimpf, Andrew T. Kelly, Ernesto Chan, Dennis R. Ball, Michael L. Alles, Marek Turowski
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3068-3073
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60d3e6f0e7b278ac81ee02441e034603
https://doi.org/10.1109/tns.2014.2368931
https://doi.org/10.1109/tns.2014.2368931
Autor:
Nadim F. Haddad, Robert A. Reed, Bin Li, Robert A. Weller, Andrew T. Kelly, Marcus H. Mendenhall, John C. Rodgers, Jason F. Ross, Reed K. Lawrence, Kevin M. Warren
Publikováno v:
IEEE Transactions on Nuclear Science. 58:975-980
SEU enhancements were introduced into a radiation hardened 90 nm CMOS technology to achieve upset immunity. An incremental enhancement approach that enables various SEU/performance trade-off was demonstrated on the same basic SRAM cell to achieve var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b2b0f5373cd50943bc37b53b612770a
https://doi.org/10.1109/tns.2011.2128882
https://doi.org/10.1109/tns.2011.2128882
Autor:
D. Patel, S. Doyle, Ernesto Chan, Andrew T. Kelly, Nadim F. Haddad, D. Lawson, Reed K. Lawrence, Jason F. Ross
Publikováno v:
IEEE Transactions on Nuclear Science. 56:2077-2082
Preliminary radiation effects analysis on a commercial 90nm CMOS process has been performed to evaluate hardness potential from a process and design perspective, and to identify techniques to promote radiation hardness enhancement towards achieving s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82cb80befe6c4f04f444788409f0d514
https://doi.org/10.1109/tns.2009.2023521
https://doi.org/10.1109/tns.2009.2023521
Autor:
Paul E. Dodd, Dolores A. Black, A.D. Tipton, M.A. Xapsos, Daniel M. Fleetwood, William H. Robinson, Jeffrey D. Black, Ronald D. Schrimpf, Kevin M. Warren, Hak Kim, M. Friendlich, Dennis R. Ball, Nadim F. Haddad, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2943-2947
A well-collapse source-injection mode for SRAM SEU is demonstrated through TCAD modeling. The recovery of the SRAM's state is shown to be based upon the resistive path from the p+ -sources in the SRAM to the well. Multiple cell upset patterns for dir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5c4c1e7f4fcaee1769fcdee60782085
https://doi.org/10.1109/tns.2008.2007231
https://doi.org/10.1109/tns.2008.2007231
Publikováno v:
Journal of Computational Electronics. 7:111-114
An automated technique is presented for the computation of the doping profiles that minimize the intrinsic fluctuations of various parameters induced by random doping fluctuations in semiconductor devices. The technique is based on the computation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::846f49124178e16cdf08956301e5e42c
https://doi.org/10.1007/s10825-008-0229-z
https://doi.org/10.1007/s10825-008-0229-z
Autor:
R. Conde, Robert A. Weller, J.H. Bowman, Brian D. Sierawski, Nadim F. Haddad, Robert A. Reed, Jean-Marie Lauenstein, J.A. Felix, Marcus H. Mendenhall, Reed K. Lawrence, Kevin M. Warren, J.R. Schwank, Lloyd W. Massengill, Paul E. Dodd, Jonathan A. Pellish, Marty R. Shaneyfelt, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 54:2312-2321
Experimental evidence and Monte-Carlo simulations for several technologies show that accurate SEE response predictions depend on a detailed description of the variability of radiation events (e.g., nuclear reactions), as opposed to the classical sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0538777bd6a2af51310d2f40fd3fb2c1
https://doi.org/10.1109/tns.2007.909901
https://doi.org/10.1109/tns.2007.909901
Autor:
Marcus H. Mendenhall, Robert A. Reed, C.L. Howe, Kevin M. Warren, Lloyd W. Massengill, A.S. Kobayashi, Dennis R. Ball, Ronald D. Schrimpf, Jonathan A. Pellish, Robert A. Weller, Nadim F. Haddad
Publikováno v:
IEEE Transactions on Nuclear Science. 53:1794-1798
The interaction between a heavy ion and the overlayer materials in an integrated circuit may result in a nuclear reaction. This reaction leads to a charge generation profile that is substantially altered from the profile generated during a direct ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f066666e492fd52f7e807e5afc41b5c5
https://doi.org/10.1109/tns.2006.880933
https://doi.org/10.1109/tns.2006.880933
Autor:
Leonard R. Rockett, Monir El-Diwany, Tuyet Bach, Paul W. Marshall, Cheryl J. Marshall, B.M. Haugerud, Reed K. Lawrence, Courtney Mitchell, Akil K. Sutton, John D. Cressler, J.P. Comeau, A. P. Gnana Prakash, Ray Ladbury, Nadim F. Haddad, Mustansir M. Pratapgarhwala
Publikováno v:
Solid-State Electronics. 50:181-190
The effects of proton and gamma irradiation on a new commercially available SiGe technology are investigated for the first time. The results of proton irradiation on a differential SiGe HBT LC oscillator are also reported in order to gauge circuit-le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eb9a1badf9669719a6fd11305aed1f8
https://doi.org/10.1016/j.sse.2005.11.007
https://doi.org/10.1016/j.sse.2005.11.007
Autor:
Ronald D. Schrimpf, A.S. Kobayashi, Robert A. Weller, Kevin M. Warren, Marcus H. Mendenhall, Dennis R. Ball, Robert A. Reed, Nadim F. Haddad
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2189-2193
We investigate the effects of metallization layers on the radiation hardness of an epitaxial CMOS memory technology using Monte Carlo simulations. A geometrically and compositionally realistic three-layer metallization scheme is employed in detailed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0409e3c509f368430d7c415258c7dd
https://doi.org/10.1109/tns.2005.860688
https://doi.org/10.1109/tns.2005.860688
Autor:
Dennis R. Ball, Robert A. Weller, Dale McMorrow, Kevin M. Warren, Ronald D. Schrimpf, S.E. Doyle, Joseph S. Melinger, Marcus H. Mendenhall, B.D. Olson, Nadim F. Haddad, C.L. Howe, W.T. Lotshaw, Michael L. Alles, Lloyd W. Massengill, Robert A. Reed
Publikováno v:
IEEE Transactions on Nuclear Science. 52:2125-2131
Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles of charge deposition in the sensitive volume of an SEU hardened SRAM. Simulation results sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::337fbbe3284ba834502d4bb1fe25f266
https://doi.org/10.1109/tns.2005.860677
https://doi.org/10.1109/tns.2005.860677