Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Nadia M. Rahhal-Orabi"'
Autor:
R. Pai, Aaron A. Budrevich, K. Kuhn, Nadia M. Rahhal-Orabi, Rafael Rios, Harry Gomez, Mark Armstrong, Annalisa Cappellani
Publikováno v:
IEEE Electron Device Letters. 32:1170-1172
Junctionless accumulation-mode (JAM) devices with channel lengths Lg down to 26 nm were fabricated on a trigate process and compared to conventional inversion-mode (IM) devices. This letter represents the first experimental comparison of short-channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5155e6e404deeb1ba1cb86bdb932f205
https://doi.org/10.1109/led.2011.2158978
https://doi.org/10.1109/led.2011.2158978
Autor:
V. Souw, Michael K. Harper, H. Mariappan, P. Vandervoorn, K. Tone, C. Auth, G. Glass, Timothy E. Glassman, Kaizad Mistry, A. Thompson, S. Jaloviar, Tahir Ghani, M. Lu, Nadia M. Rahhal-Orabi, Jason Klaus, J. Sandford, Christopher J. Wiegand, B. Norris, F. Tambwe, T. Troeger, D. Lavric, Pushkar Ranade, Michael L. Hattendorf, Annalisa Cappellani, Subhash M. Joshi, J.-S. Chun, J. Wiedemer, A. Dalis, K. Kuhn, P. Hentges, D. Towner, Charles H. Wallace, Alison Davis, Lucian Shifren
Publikováno v:
2008 Symposium on VLSI Technology.
Two key process features that are used to make 45 nm generation metal gate + high-k gate dielectric CMOS transistors are highlighted in this paper. The first feature is the integration of stress-enhancement techniques with the dual metal-gate + high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d8f22f52ce9f6ca3a2f66713d2fefa
https://doi.org/10.1109/vlsit.2008.4588589
https://doi.org/10.1109/vlsit.2008.4588589