Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Nadia Brière de l'Isle"'
Autor:
Alexandru, Nedelcu, Gwénaëlle, Hamon, Adrien, Digonnet, Sylvain, Mathonnière, Nadia, Brière de l’Isle
Publikováno v:
In Infrared Physics and Technology May 2015 70:129-133
Publikováno v:
Infrared Physics & Technology. 59:125-132
GaAs-based intersubband infrared detectors, such as Quantum Well Infrared Photodetectors and Quantum Cascade Detectors have proven their ability to address not only conventional thermal imaging applications, but also advanced functionalities such as
Autor:
Virginie Trinité, Xavier Marcadet, Agnes Coulibaly, Vincent Guériaux, Lydie Dua, Alexandru Nedelcu, Nadia Brière de l’Isle
Publikováno v:
Infrared Physics & Technology. 54:177-181
One of the key features of quantum well infrared photodetectors is the narrow absorption band. This inherently narrow spectral response has been proven to be an excellent asset to enhance the contrast in thermal images. Yet, some applications, as the
Autor:
Alexandru Nedelcu, Ybe Creten, Vincent Guériaux, Arnaud Berurier, Toufiq Bria, Nadia Brière de l'Isle, Chris Van Hoof
Publikováno v:
SPIE Proceedings.
Autor:
Philippe Bois, Alexandru Nedelcu, Eric Belhaire, Nadia Brière de l’Isle, Patrick Merken, Eric Costard, J. P. Truffer, Olivier Saint-Pé
Publikováno v:
SPIE Proceedings.
The European Space Agency is currently funding a project led by Alcatel-Thales III-V Lab, intended to develop high performance, broadband (11-15μm) Quantum Well Infrared Photodetectors (QWIPs) and optimised read-out circuits for Earth Observation an
Autor:
J. A. Robo, David Gohier, Alain Manissadjian, Odile Huet, Lydie Dua, Philippe Bois, Alexandru Nedelcu, Nadia Brière de l’Isle, Xavier Marcadet, Eric Costard, Jean P. Truffer
Publikováno v:
SPIE Proceedings.
Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III-V compounds, at THALES Research and Technology Laboratory. The QWIP technology allows the realization of large staring arrays for
Autor:
Lydie Dua, Tom Cassidy, Fabrice Semond, Daniel Poitras, Jean-Luc Reverchon, Benjamin Damilano, Pierre Legagneux, R. Dudek, Nicolas Grandjean, Mauro Mosca, Jean Massies, Nadia Brière de l’Isle, Jean-Yves Duboz
Publikováno v:
Scopus-Elsevier
Resonant-cavity InGaN/GaN quantum well light emitting diodes have been fabricated. Nitride layers were grown by molecular beam epitaxy on Si (111). We fabricated the structures using a combination of Si substrate etching, GaN etching and dielectric (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15bda69a6200c700e521400a6c051013
http://hdl.handle.net/10447/45220
http://hdl.handle.net/10447/45220