Zobrazeno 1 - 10
of 162
pro vyhledávání: '"Nadia A. EL-Masry"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:14180-14191
Molybdenum disulfide (MoS2) films with n- and p-type conductivity are considered to be important for potential use in next generation devices. Laser physical vapor deposition is used in the present work to deposit undoped, niobium (Nb)-doped and tung
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9a34e241c458dcf62402656ffac123e
https://doi.org/10.1007/s10854-018-9551-9
https://doi.org/10.1007/s10854-018-9551-9
Publikováno v:
Applied Physics Letters. 119:122101
Using the semibulk approach, p-InxGa1−xN semibulk (p-SB) templates were grown with an indium content ranging from 2.4% to 15.2% via metalorganic chemical vapor deposition. When compared to optimized bulk p-GaN, the hole concentration in p-SB with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df80eff11815249dd0edf3f0184779f6
https://doi.org/10.1063/5.0065194
https://doi.org/10.1063/5.0065194
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
We present a low temperature and low pressure approach to multijunction solar cell fabrication combining the high efficiency multi-junction concept with the low cost of thin film technology in one solar cell structure. The intermetallic bonding appro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a48f38f245048a093d5ab091ba97ffa2
https://doi.org/10.1109/pvsc40753.2019.8980696
https://doi.org/10.1109/pvsc40753.2019.8980696
Publikováno v:
Applied Physics Letters. 117:052103
InGaN/GaN multiple quantum well (MQW) structures currently used in optical devices are based on highly strained InGaN films. The presence of strain reduces quantum efficiency and indium incorporation, two critical parameters in addressing the green g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967fba95818761864cce2aff60ca6fb8
https://doi.org/10.1063/5.0015419
https://doi.org/10.1063/5.0015419
Autor:
Tim B. Eldred, Salah M. Bedair, Mostafa Abdelhamid, Nadia A. El-Masry, J. G. Reynolds, James M. LeBeau
Publikováno v:
Applied Physics Letters. 116:102104
Device quality InGaN templates are synthesized using the semibulk (SB) approach. The approach maintains the film's 2D growth and avoids the formation of indium-metal inclusions. The strain relaxation processes of the grown InxGa1−xN templates are a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a4f38c7086ae799f998666fdffab5a4
https://doi.org/10.1063/1.5139269
https://doi.org/10.1063/1.5139269
Publikováno v:
Journal of Electronic Materials. 44:4161-4166
Thick, high-quality InGaN layers can be used as templates for quantum well strain reduction in light-emitting diodes and as optical absorption layers in solar cell structures. Current InGaN growth technology, however, is primarily limited by V-pit fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f68fe193ddbe2f5b1f6260541329623
https://doi.org/10.1007/s11664-015-3989-9
https://doi.org/10.1007/s11664-015-3989-9
Publikováno v:
Journal of Crystal Growth. 367:88-93
We demonstrate InxGa1−xN/GaN light emitting diode structures with different sets of multifacet semipolar formation grown laterally on m-plane sidewalls formed by stripe patterning on preliminary grown c-plane GaN template. It was found that regrowt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb669ccb470fe528902066b25feea49a
https://doi.org/10.1016/j.jcrysgro.2012.12.039
https://doi.org/10.1016/j.jcrysgro.2012.12.039
Autor:
Conrad Zachary Carlin, Geoffrey K. Bradshaw, Nadia A. El-Masry, Joshua P. Samberg, Salah M. Bedair, Peter C. Colter
Publikováno v:
IEEE Journal of Photovoltaics. 3:278-283
Multiple quantum wells (MQW) lattice matched to GaAs consisting of In0.14Ga0.76As wells balanced with GaAs0.24P0.76 barriers have been used to extend the absorption of GaAs subcells to longer wavelengths for use in an InGaP/GaAs/Ge triple-junction ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68015516d0b5102803055b99b11c69f2
https://doi.org/10.1109/jphotov.2012.2216858
https://doi.org/10.1109/jphotov.2012.2216858
Doping of GaN and InGaN epilayers with Mn and FE has been achieved by metal organic chemical vapor deposition (MOCVD) and solid-state diffusion. Hysteretic behavior was observed at room temperature and structural measurements, X-ray diffraction, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fef6fd1234630ad49f13c6ef5ba51fb4
https://doi.org/10.1016/b978-0-08-100041-0.00012-3
https://doi.org/10.1016/b978-0-08-100041-0.00012-3
Autor:
Pavel Frajtag, Nadia A. El-Masry, Tanja Paskova, A. M. Hosalli, Salah M. Bedair, Joshua P. Samberg, Peter C. Colter
Publikováno v:
Journal of Crystal Growth. 352:203-208
We report on the generation of GaN nanowires (NWs) using mask-less reactive ion etching (RIE). The NWs are believed to be the result of a high etching rate in regions where a high dislocation density is present in the GaN films grown on sapphire subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bc62b1828efb8fe4da7ca8ab0e2c27b
https://doi.org/10.1016/j.jcrysgro.2011.12.055
https://doi.org/10.1016/j.jcrysgro.2011.12.055