Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Nadezhda E. Korsunskaya"'
Autor:
T. Stara, F. F. Sizov, Nadezhda E. Korsunskaya, L.Yu. Khomenkova, K. V. Svezhentsova, N. N. Melnichenko
Publikováno v:
Semiconductors. 44:79-83
The structural and luminescence characteristics of porous silicon produced by chemical etching are studied. From analysis of the behavior of luminescence spectra with temperature, it is shown that the luminescence band of porous silicon samples produ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ee9c665b79bdb3eae5843b78a34a3b
https://doi.org/10.1134/s1063782610010136
https://doi.org/10.1134/s1063782610010136
Autor:
L. V. Scherbina, Nadezhda E. Korsunskaya, Georgiy Polupan, E. P. Domashevskaya, Tetyana Torchynska, V. P. Papusha, L. I. Khomenkova, M. Morales Rodriguez, S. Yu. Turischev, V. A. Terekhov
Publikováno v:
Surface Review and Letters. :1047-1052
It has been shown that the intensive and broad "red" photoluminescence band in porous silicon is a nonelementary one and could be decomposed on at least three elementary bands. Photoluminescence, ultrasoft X-ray emission spectroscopy, infrared absorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d91662cbe16fe1ff4e2b0308b9baf84
https://doi.org/10.1142/s0218625x02003329
https://doi.org/10.1142/s0218625x02003329
Autor:
Yu. G. Sadofyev, Ye.Yu. Braylovsky, M. Sharibaev, Ye.F. Venger, L. V. Borkovskaya, M.P. Semtsiv, Nadezhda E. Korsunskaya, G. N. Semenova
Publikováno v:
Materials Science and Engineering: B. 80:193-196
The effect of electron and X-ray irradiation on the optical characteristics of CdZnTe/ZnTe quantum-size structures has been investigated. A comparison between the results of both irradiations has shown an essential role of electron excitation in radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d59da44c6d33920b1a88d5aa1c90f6
https://doi.org/10.1016/s0921-5107(00)00629-2
https://doi.org/10.1016/s0921-5107(00)00629-2
Publikováno v:
Thin Solid Films. 381:88-93
The effect of preparation regimes on the oxide composition, the number of dangling bonds, the photoluminescence and its excitation spectra have been investigated. The influence of the oxidation process during aging of porous silicon at ambient atmosp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f875c820c2b4d8428afe6def8c68fae
https://doi.org/10.1016/s0040-6090(00)01351-1
https://doi.org/10.1016/s0040-6090(00)01351-1
Autor:
Tetyana Torchynska, F.G. Becerril Espinoza, Nadezhda E. Korsunskaya, Georgiy Polupan, L.Yu. Khomenkova, J. Palacios Gomez, A. García Bórquez
Publikováno v:
ResearcherID
Photoluminescence and photoluminescence excitation spectroscopies, scanning electron microscopy, and atomic force microscopy were used to study the photoluminescence mechanism in porous silicon. The dependences of photoluminescence parameters on elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4fe2d7278c3d040da79709240d4d24c
https://doi.org/10.1016/s0169-4332(00)00529-8
https://doi.org/10.1016/s0169-4332(00)00529-8
Autor:
B. M. Bulakh, B. R. Dzhumaev, E. G. Manoilov, E. B. Kaganovich, Nadezhda E. Korsunskaya, G.V. Beketov, L.Yu. Khomenkova
Publikováno v:
Applied Surface Science. 166:349-353
Plenty photoluminescence (PL) and plenty photoluminescence excitation (PLE) spectra, as well as layer structure and surface substances on Si crystallites of porous silicon prepared by different technique, have been investigated by photoluminescence,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5373588773419db94dd37f91c2674123
https://doi.org/10.1016/s0169-4332(00)00448-7
https://doi.org/10.1016/s0169-4332(00)00448-7
Publikováno v:
Microelectronic Engineering. :485-493
The effect of the preparation regime on the oxide composition as well as the photoluminescence (PL) and photoluminescence excitation (PLE) spectra of porous silicon have been investigated. The influence of the oxidation process during ageing at ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55a67b9d2d333261489769630965f90
https://doi.org/10.1016/s0167-9317(99)00503-1
https://doi.org/10.1016/s0167-9317(99)00503-1
Autor:
B. R. Dzhymaev, Moissei K. Sheinkman, I. V. Markevich, L. V. Borkovskaya, A.F. Singaevsky, Nadezhda E. Korsunskaya
Publikováno v:
Acta Physica Polonica A. 94:255-259
A role of mobile defects in processes responsible for II—VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6275f6e9aebc032625a8efc13e7d666d
https://doi.org/10.12693/aphyspola.94.255
https://doi.org/10.12693/aphyspola.94.255
Publikováno v:
Materials Science and Engineering: B. 34:12-17
Large US single crystals were fabricated by a “free growth” from the vapour phase in the presence of chemical compounds that bind the excess cadmium and do not enter into the growing crystal. Some parameters of the bulk crystals fabricated by thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c6349678d69ad69bdd223b7c621aa19
https://doi.org/10.1016/0921-5107(95)01220-6
https://doi.org/10.1016/0921-5107(95)01220-6
Autor:
Moissei K. Sheinkman, I. V. Markevich, E. P. Shul'ga, Nadezhda E. Korsunskaya, I. A. Drozdova
Publikováno v:
Materials Science Forum. :1265-1270
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9b6817865047bc9d58d3285c671c08f
https://doi.org/10.4028/www.scientific.net/msf.83-87.1265
https://doi.org/10.4028/www.scientific.net/msf.83-87.1265