Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nader A.P. Mogaddam"'
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 268:3417-3420
In this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated. SiO2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. Formation of Ge nanocrys
Publikováno v:
Crystal Research and Technology. 41:1100-1105
Thermally stimulated current measurements are carried out on as-grown Tl4Ga3InSe8 layered single crystal in the temperature range 10–160 K with different heating rates. Experimental evidence is found for two shallow trapping centers in Tl4Ga3InSe8.
Publikováno v:
Semiconductor Science and Technology. 21:1250-1255
We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10–90 K with different heating rates of 0.10–0.30 K s−1. The data were analysed by curve fitting, heating rate
Autor:
Terje G. Finstad, Rasit Turan, Sean Erik Foss, Selcuk Yerci, Arif Sinan Alagoz, Nader A.P. Mogaddam
Publikováno v:
Journal of Applied Physics. 104:124309
SiGe nanocrystals have been formed in SiO2 matrix by cosputtering Si, Ge, and SiO2 independently on Si substrate. Effects of the annealing time and temperature on structural and compositional properties are studied by transmission electron microscopy