Maskless and contactless patterned silicon deposition using a localized PECVD process

Autor: Ronan Leal, Tatiana Novikova, Bastien Bruneau, Erik Johnson, François Silva, Nada Habka, Pavel Bulkin

Publikováno v: Plasma Sources Science and Technology
Plasma Sources Science and Technology, IOP Publishing, 2020, 29 (2), pp.025023. ⟨10.1088/1361-6595/ab5e2c⟩

We present a novel technique to perform contactless and mask-free patterned plasma enhanced chemical vapour deposition and etching. When a powered electrode with narrow slits is placed very close to the substrate, plasma is selectively ignited within

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31befc06c8005806039069733a2a815b
https://hal.archives-ouvertes.fr/hal-02545248/document

Energy level of compensator states in (001) phosphorus-doped diamond

Autor: Satoshi Yamasaki, Hideyo Okushi, Tsubasa Matsumoto, Hiromitsu Kato, Nada Habka, Daisuke Takeuchi, Julien Barjon

Publikováno v: Diamond and Related Materials. 20:1016-1019

The energy level of acceptor-type compensator states in (001) phosphorus-doped diamond is examined by combining the techniques of cathodoluminescence analysis, Hall-effect measurements, secondary ion mass spectroscopy, and capacitance–voltage measu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62528cef9ab9a433241094164ead87cf
https://doi.org/10.1016/j.diamond.2011.05.021

High surface smoothening of diamond HPHT (100) substrates

Autor: Julien Barjon, M.-A. Pinault, Nada Habka, Philippe Bergonzo, A. Ben-Younes, Christine Mer-Calfati

Publikováno v: physica status solidi (a). 206:1955-1959

The aim of this work is to study the influence of (100) substrate pre-treatment before boron doped homoepitaxial diamond growth. Atomic force microscopy measurements were made on (100) Ib HPHT and (100) IIa chemical vapour deposition commercially ava

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::953fd0bbb80eeb28b73e6736b5883e65
https://doi.org/10.1002/pssa.200982232

Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy

Autor: Nada Habka, Zdenek Remes, Dominique Tromson, Christine Mer, Franck Omnès, Julien Barjon, J. Chevallier, François Jomard, T. Kociniewski, Philippe Bergonzo, Milos Nesladek

Publikováno v: Diamond and Related Materials. 18:827-830

Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy (AMFTPS) and Dual Beam Photoconductivity are sensitive tools for the measurements of shallow and deep defects related absorption in high resistive semiconductors. Measurements

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::843544d78614d7efc671fee7e3aa5e30
https://doi.org/10.1016/j.diamond.2009.01.008

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS

Autor: Nada Habka, Jean-Marie Bluet, Veronique Soulière, Maher Soueidan, Bilal Nsouli, Gabriel Ferro

Publikováno v: Materials Science Forum
ICSCRM 2007
ICSCRM 2007, Oct 2007, Otsu, Japan. pp.529-532, ⟨10.4028/www.scientific.net/MSF.600-603.529⟩

International audience; We report an optical study of 3C-SiC layers grown on 6H-SiC substrates by VLS mechanism using a Si-Ge melt. The photoluminescence and μ-Raman results show a clear and significant incorporation of germanium in the layers from

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01880e89ac0940c0576243b01bf31c0d
https://doi.org/10.4028/www.scientific.net/msf.600-603.529