Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Nada Bhouri"'
Autor:
S.G Thomas, Cor Claeys, J. Geypen, Hugo Bender, M. Kamruzzaman Chowdhury, Nada Bhouri, Eddy Simoen, Peter Verheyen, Olivier Richard, Pierre Tomasini, B. Vissouvanadin, V. Machkaoutsan, J.P. Lu, Roger Loo, R. Wise, J.W. Weijtmans, Mireia Bargallo Gonzalez, H. Hikavyy
Publikováno v:
Solid State Phenomena. :95-100
This paper presents an investigation of the impact of a Highly Doped Drain (HDD) implantation after epitaxial deposition on Si1-xGex S/D junction characteristics. While the no HDD diodes exhibit the usual scaling of the leakage current density with P
Autor:
Frederik Leys, Shawn G. Thomas, R. Wise, Roger Loo, J.W. Weijtmans, Nada Bhouri, Cor Claeys, Peter Verheyen, Vladimir Machkaoutsan, J.P. Lu, Eddy Simoen, Pierre Tomasini, Mireia Bargallo Gonzalez, Olivier Richard, Mohammad Kamruzzaman Chowdhury
Publikováno v:
ECS Transactions. 6:389-396
This paper presents an investigation of the effect of the relaxation on the electrical performance of recessed Si1-xGex source/drain junctions. It is shown, that the peripheral leakage current density scales exponentially with the total epilayer thic
Autor:
Matthew Wormington, Tamzin Lafford, Stéphane Godny, Paul Ryan, Roger Loo, Andriy Hikavyy, Nada Bhouri, Matty Caymax, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Dan Herr, Rajinder P. Khosla, Erik M. Secula
Publikováno v:
AIP Conference Proceedings.
High resolution X‐ray diffraction (HRXRD) measurements were performed using a commercially‐available X‐ray metrology tool, the BedeMetrix™‐L, on small test pads containing arrays of SiGe line structures selectively deposited in Si recesses
Autor:
Cor Claeys, Eddy Simoen, Mohammad Kamruzzaman Chowdhury, Nada Bhouri, Peter Verheyen, Frederik Leys, Olivier Richard, Roger Loo, Vladimir Machkaoutsan, Pierre Tomasini, Shawn Thomas, Jiong Ping Lu, J.W Weijtmans, R. Wise
Publikováno v:
ECS Meeting Abstracts. :601-601
not Available.