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The temperature dependence of both components of the resistivity tensor $\varrho_{xx}(T)$ and $\varrho_{xy}(T)$ has been studied at T $\geq$ 4.2 K within IQHE plateaux around filling factors \nu=2 and \nu=4 of medium- -mobility GaAs/AlGaAs heterostru
Externí odkaz:
http://arxiv.org/abs/cond-mat/9612053
Autor:
Vasilyev, Yu.B., Stellmach, C., Nachtwei, G., Suris, R.A., Suchalkin, S.D., Meltser, B.Ya., Ivanov, S.V., Kop’ev, P.S.
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2006 34(1):308-310
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2002 12(1):144-148
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2002 12(1):20-23
Publikováno v:
In Physica B: Physics of Condensed Matter 2002 314(1):268-272
Publikováno v:
In Physica B: Physics of Condensed Matter 2002 314(1):166-170
Publikováno v:
In Physica B: Physics of Condensed Matter April 2001 298(1-4):230-233
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 2000 6(1):128-131
Autor:
Gouider, F., Nachtwei, G., Brüne, C., Buhmann, H., Vasilyev, Yu. B., Salman, M., Könemann, J., Buckle, P. D.
Publikováno v:
Journal of Applied Physics; Jan2011, Vol. 109 Issue 1, p013106, 5p, 1 Chart, 4 Graphs
Autor:
Nachtwei, G.
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures 1999 4(2):79-101