Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions

Autor: Gao, Xue, Liang, Shiheng, Ferri, Anthony, Huang, Weichuan, Rouxel, Didier, Devaux, Xavier, Li, Xiao-Guang, Yang, Hongxin, Chshiev, Mairbek, Desfeux, Rachel, Da Costa, Antonio, Hu, Guichao, Stoffel, Mathieu, Nachawaty, Abir, Jiang, Chunping, Zeng, Zhongming, Liu, Jian-Ping, Yang, Hui, Lu, Yuan

Publikováno v: Applied Physics Letters vol.116 (2020)

We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric pro

Externí odkaz: http://arxiv.org/abs/2004.03274

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Fabrication of ferroelectric tunnel nano-junctions in P(VDF-TrFE)-thin layers with conductive-AFM control

Autor: Francesca, Kevin Dalla, Ferri, Anthony, Costa, Antonio Da, Maës, Luc, Jahjah, Walaa, Nachawaty, Abir, Chen, Liufang, Le Breton, Jean-Christophe, Chshiev, Mairbek, Schieffer, Philippe, Lu, Yuan, Desfeux, Rachel

Publikováno v: I(SPM)3 (2021 International Scanning Probe Microscopy (ISPM) + Scanning Probe Microscopy on Soft & Polymeric Materials)
I(SPM)3 (2021 International Scanning Probe Microscopy (ISPM) + Scanning Probe Microscopy on Soft & Polymeric Materials), Jun 2021, Colorado Springs (Online), United States

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a191592a9bd463232de09e60df32ece8
https://univ-artois.hal.science/hal-03958420

Electronic properties of epitaxial graphene close to the charge neutrality point

Autor: Nachawaty, Abir

Publikováno v: Physique [physics]. Université Montpellier, 2018. Français. ⟨NNT : 2018MONTS095⟩

Local and nonlocal magnetoresistances measurements on monolayer graphene grown on the silicon face of silicon carbide (SiC) are reported. The purpose of this work is to understand the physical phenomena appearing close to the charge neutrality point

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______212::6462b421c31e1f580d5c2930448a0ea5
https://tel.archives-ouvertes.fr/tel-02157943

Growth of p-type monolayer graphene on SiC (0001) via sublimation at low argon pressure

Autor: WANG, Tianlin, LANDOIS, Perine, BAYLE, Maxime, NACHAWATY, Abir, DESRAT, Wilfried, HUNTZINGER, Jean-roch, PAILLET, Matthieu, JOUAULT, Benoit, CONTRERAS, Sylvie

Publikováno v: GDR
GDR, Oct 2016, Oleron, France

Graphene, known as one carbon layer material, holds attractive properties due to its hexagonal lattice, also called honeycomb structure. Since the seminal work on mechanically exfoliated few layer graphene, more growth processes were explored: Chemic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8e324db0c07937271970ed44e3b76d3c
https://hal.archives-ouvertes.fr/hal-01455032