Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Nabil Najjari"'
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2019, 115 (26), pp.262901. ⟨10.1063/1.5128846⟩
Applied Physics Letters, American Institute of Physics, 2019, 115 (26), pp.262901. ⟨10.1063/1.5128846⟩
We study electron transport in an assembly of epitaxial Cr2O3 nanoparticles embedded in a MgO tunnel barrier: an unusual variation in the Coulomb blockade charging energy is observed as a function of the size of the clusters. In striking contrast to
Publikováno v:
Physical Review B. 91
Magnetic properties of ${\mathrm{Cr}}_{2}{\mathrm{O}}_{3}$ epitaxial clusters inserted in an Fe/MgO/Fe tunnel barrier are revealed by their tunnel magnetoresistance signature. The cluster assembly has been shown in a previous work to behave as a supe
Publikováno v:
Nanotechnology. 27:245706
We observe, as a function of temperature, a second order magnetic phase transition in nanometric Cr2O3 clusters that are epitaxially embedded in an insulating MgO matrix. They are investigated through their tunnel magneto-resistance signature, the Mg
Autor:
Nabil Najjari, Marie Minvielle, Gilbert Sassine, Fabien Alibart, Catherine Dubourdieu, Selina La Barbera
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:012202
In this paper, the authors focus on two well-identified switching mechanisms, namely, interfacial (or homogeneous) switching and filamentary switching. These switching mechanisms have been reported in various devices, but a broader analysis remains t
Autor:
F. Schleicher, Sophie Barre, Reda Moubah, Aziz Dinia, Silviu Colis, Martin Bowen, G. Versini, H. Majjad, Guy Schmerber, Nabil Najjari, Corinne Ulhaq-Bouillet
Publikováno v:
Physical Review B. 82
To test whether the interface between an Fe-alloy electrode and a ${\text{SrTiO}}_{3}$ (STO) tunnel barrier constitutes or not a good spin injector, we have studied the transport and magnetic properties of ${\text{CoFe}}_{2}$ $(7.5\text{ }\text{nm})/
Autor:
D. Halley, Victor DaCosta, Hicham Majjad, Yves Henry, Jacek Arabski, Martin Bowen, Eric Bertin, Bernard Doudin, Nabil Najjari
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2011, 109, pp.083712. ⟨10.1063/1.3561497⟩
Journal of Applied Physics, 2011, 109, pp.083712. ⟨10.1063/1.3561497⟩
Journal of Applied Physics, American Institute of Physics, 2011, 109, pp.083712. ⟨10.1063/1.3561497⟩
Journal of Applied Physics, 2011, 109, pp.083712. ⟨10.1063/1.3561497⟩
The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the conductance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c839008a50afdada7d5d979c7fde2b9
http://arxiv.org/abs/1006.5329
http://arxiv.org/abs/1006.5329
Publikováno v:
Physical Review B. 81
curves and found to be modified by the frequency of the bias voltage sweep. Obser-vation of slow relaxation of the resistance state values is reported. A model is proposed that takes into accountthe incidence of time-dependent electric-field-induce
Autor:
Yves Henry, Giovanni Bertoni, Hicham Majjad, Nabil Najjari, D. Halley, Martin Bowen, Corinne Ulhaq-Bouillet, Jo Verbeeck, G. Van Tendeloo, Wolfgang Weber
Publikováno v:
Applied physics letters
Hysteretic resistance switching is observed in epitaxial Fe∕Cr∕MgO∕Fe magnetic tunnel junctions under bias voltage cycling between negative and positive values of about 1V. The junctions switch back and forth between high- and low-resistance st
Publikováno v:
Nanotechnology; 6/17/2016, Vol. 27 Issue 24, p1-1, 1p