Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Nabet, Massinissa"'
Autor:
Huang, Yang, Liu, Fanyu, Cristoloveanu, Sorin, Ma, Shiqi, Nabet, Massinissa, Yan, Yiyi, Li, Bo, Li, Binhong, Nguyen, Bich-Yen, Han, Zhengsheng, Raskin, Jean-Pierre
Publikováno v:
In Solid State Electronics August 2024 218
Autor:
Huang, Yang, Yan, Yiyi, Nabet, Massinissa, Liu, Fanyu, Li, Bo, Li, Binhong, Han, Zhengsheng, Cristoloveanu, Sorin, Raskin, Jean-Pierre
Publikováno v:
In Solid State Electronics July 2024 217
Autor:
Huang, Yang, Yan, Yiyi, Nabet, Massinissa, Liu, Fanyu, Li, Bo, Li, Binhong, Han, Zhengsheng, Nguyen, Bich-Yen, Cristoloveanu, Sorin, Raskin, Jean-Pierre
Publikováno v:
In Solid State Electronics November 2023 209
Autor:
Nabet, Massinissa, Rack, Martin, Hashim, Nur Zatil Ismah, de Groot, C.H. (Kees), Raskin, Jean-Pierre
Publikováno v:
In Solid State Electronics June 2020 168
Autor:
Scheen, Gilles, Tuyaerts, Romain, Rack, Martin, Nyssens, Lucas, Rasson, Jonathan, Nabet, Massinissa, Raskin, Jean-Pierre
Publikováno v:
In Solid State Electronics June 2020 168
Akademický článek
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Autor:
Vandermolen, Eric, Ferrandis, Philippe, Allibert, Frédéric, Nabet, Massinissa, Rack, Martin, Raskin, Jean-Pierre, Cassé, Mikaël
Publikováno v:
Journal of Applied Physics; 6/7/2021, Vol. 129 Issue 21, p1-8, 8p
Autor:
Bertrand, Isabelle, Flatresse, Philippe, Besnard, Guillaume, Bethoux, Jean-Marc, Chalupa, Zdenek, Plantier, Christophe, Rack, Martin, Nabet, Massinissa, Raskin, Jean-Pierre, Allibert, Frederic
Publikováno v:
ECS Transactions, Vol. 108, no.5, p. 31-45 (2022)
FD-SOI CMOS technology is entering the mmWave realm, providing undeniable benefits in terms of data-rates, bandwidth, latency and power consumption improvements. The high resistivity substrate option is seen as a major booster to reach ultimate mmWav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4644067d9450e6e44826f4ab5ea080d1
https://doi.org/10.1149/10805.0031ecst
https://doi.org/10.1149/10805.0031ecst
Publikováno v:
2022 17th European Microwave Integrated Circuits Conference (EuMIC).
This paper presents a novel 28 GHz down- conversion mixer topology using the back-gate terminal in 22 nm FD-SOI as an RF excitation port for the 21 GHz local oscillator (LO) signal. A double balanced architecture with an active load and transimpedanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fb79384bfbcbb154a5379b42d377365
https://doi.org/10.23919/eumic54520.2022.9923503
https://doi.org/10.23919/eumic54520.2022.9923503
Autor:
Vandermolen, Eric, Ferrandis, Philippe, Allibert, Frédéric, Augendre, Emmanuel, Nabet, Massinissa, Rack, Martin, Raskin, Jean-Pierre, Cassé, Mikaël
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1493::5e10f61bb6e57a541eecad48ef790289
https://hdl.handle.net/2078.1/269385
https://hdl.handle.net/2078.1/269385
