Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Na. Sghaier"'
Publikováno v:
Optik. 159:57-61
In this paper we report the photo-trapping effect of photogenerated charge in a few numbers of silicon nanocrystals (Si-NCs) embedded in SiO2 layer tunnel oxide of small area single electron photodetector (Photo-SET or nanopixel). Using Current-Volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffdd7229136d8000ddf9af12ce235e5
https://doi.org/10.1016/j.ijleo.2018.01.058
https://doi.org/10.1016/j.ijleo.2018.01.058
Publikováno v:
Microelectronics Journal. 40:543-546
In this paper, we present a multi-island single-electron transistor (MISET) model based on the orthodox theory and solving the master equation. Using SIMON simulator, we investigate the electrical characteristics of single-electron transistors (SETs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d55feb271ba9704034947fe2b6003ee
https://doi.org/10.1016/j.mejo.2008.06.089
https://doi.org/10.1016/j.mejo.2008.06.089
Publikováno v:
Materials Science and Engineering: C. 28:882-886
This work reports the extraction of oxide traps properties of n-metal–oxide–semiconductor field-effect transistors with W × L = 0.5 × 0.1 μm2 using random telegraph signals (RTS) techniques. RTS study of nc-Si has been performed on thin tunnel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7895da31850be62dd15ccffa0d4b485
https://doi.org/10.1016/j.msec.2007.10.050
https://doi.org/10.1016/j.msec.2007.10.050
Publikováno v:
Materials Science and Engineering: C. 28:676-679
The aim of this work is to study the origin of parasitic effects observed on the output characteristics of InAlAs/InGaAs/InP HEMTs with various buffer layers. I ds − V ds measurements as a function of the temperature have first been performed. Seve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd405622ebe74255c77e63e4f1cd305b
https://doi.org/10.1016/j.msec.2007.10.075
https://doi.org/10.1016/j.msec.2007.10.075
Publikováno v:
Microelectronics Journal. 38:894-899
In the first part of this paper, we present simulations of single-electron transistor (SET) output characteristic using Maple. Typical SET I-V characteristics and charge energies curves are presented by developing Maple programs. In the second part o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8673273fe76a6421550edb68f8d1816c
https://doi.org/10.1016/j.mejo.2007.06.004
https://doi.org/10.1016/j.mejo.2007.06.004
Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications
Autor:
Abdelkader Souifi, M. Trabelsi, L. Militaru, Na. Sghaier, Adel Kalboussi, Noureddine Yacoubi, N. Sghaier
Publikováno v:
Microelectronics Journal. 37:1399-1403
In this paper, we present the extraction of oxide traps properties of n-metal-oxide-semiconductor (N-MOS) field effect transistors with [email protected]^2 using low-frequency (LF and random telegraph signal) noise and static I(V) characterizations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0ed6d1f2ce51a9358ac418189996266
https://doi.org/10.1016/j.mejo.2006.06.015
https://doi.org/10.1016/j.mejo.2006.06.015
Publikováno v:
Materials Science and Engineering: B. 127:34-40
It is well known that trapping effects can limit the output power performance of microwave field-effect transistors (FETs). This is particularly true for the wide band gap devices. In this paper, we present a detailed study of drain Current Deep Leve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8efee9985e1e211f19c7d5808d2cf338
https://doi.org/10.1016/j.mseb.2005.09.047
https://doi.org/10.1016/j.mseb.2005.09.047
Autor:
M.M. Ben Salem, Abdelkader Souifi, S. Bouzgarrou, Gérard Guillot, Na. Sghaier, Adel Kalboussi
Publikováno v:
Materials Science and Engineering: B. 121:178-182
In this paper, static measurements and defect analysis performed on InAlAs/InGaAs/InP HFETs are presented. I d – V ds – T , I d – V gs – T and I g – V gs – T characteristics show anomalies (leakage current, degradation in saturation curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d354659044019f50015caa7a21560a0
https://doi.org/10.1016/j.mseb.2005.03.026
https://doi.org/10.1016/j.mseb.2005.03.026
Publikováno v:
2009 6th International Multi-Conference on Systems, Signals and Devices.
In this work, we propose a concept of Single Electron Photo-detector (Photo-SET) able to detect one by one electron. This photo-SET consists of two blocs (reading and detection blocs) that operate simultaneously. From simulations results we determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8f2d36f2111d8b285835e574158d482
https://doi.org/10.1109/ssd.2009.4956662
https://doi.org/10.1109/ssd.2009.4956662
Publikováno v:
The European Physical Journal Applied Physics. 50:20302
In this work, we present noise analysis in a Single Electron Photo-detector (photo-SET or nanopixel) able to detect one by one electron. We perform the power spectral densities (PSD) of random telegraph signals (RTSs) measured in the dark conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcdf3f55c966b4d44371e3fe04188d9b
https://doi.org/10.1051/epjap/2010037
https://doi.org/10.1051/epjap/2010037