Zobrazeno 1 - 9
of 9
pro vyhledávání: '"NYFFELER, Clemens"'
The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for electroni
Externí odkaz:
http://arxiv.org/abs/1609.00701
The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most studied r
Externí odkaz:
http://arxiv.org/abs/1409.6499
Publikováno v:
In Carbon April 2012 50(5):1720-1726
Autor:
Burr, Geoffrey W., Tchoulfian, Pierre, Topuria, Teya, Nyffeler, Clemens, Virwani, Kumar, Padilla, Alvaro, Shelby, Robert M., Eskandari, Mona, Jackson, Bryan, Lee, Bong-Sub
Publikováno v:
Journal of Applied Physics; May2012, Vol. 111 Issue 10, p104308, 12p
Autor:
Nyffeler, Clemens Benedict
Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______185::9eca945584df2ced643b90b98129ed9e
https://infoscience.epfl.ch/record/222937
https://infoscience.epfl.ch/record/222937
In this work, a chip-level post-CMOS processing protocol for 3D integration is presented to achieve multilayer stacking. This protocol includes TSV formation on the top chip, bonding the chips on top of each other, and finally the electrical connecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______185::061ccbaae4789b4fd4473d5fe94b4b79
https://infoscience.epfl.ch/record/202066
https://infoscience.epfl.ch/record/202066
After decades of miniaturization and performance tuning, Silicon electronics is approaching its technological limits. In the search for alternative transistor channel materials, Graphene has been given much attention since its discovery in 2004, main
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______185::1045f6baffb2b86a5fd19c6cabf24789
https://infoscience.epfl.ch/record/203113
https://infoscience.epfl.ch/record/203113
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM); 1/1/2015, p1.4-27.4.4, 0p