Zobrazeno 1 - 10
of 1 994
pro vyhledávání: '"NVM"'
Autor:
Yu-Cheng Hsieh, Yu-Cheng Lin, Yao-Hung Huang, Yu-Der Chih, Jonathan Chang, Chrong-Jung Lin, Ya-Chin King
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-8 (2024)
Abstract In this work, multi-level storage in the via RRAM has been first time reported and demonstrated with the standard FinFET CMOS logic process. Multi-level states in via RRAM are achieved by controlling the current compliance during set operati
Externí odkaz:
https://doaj.org/article/7862707f522f4c4cb79ddbffba4f7f6d
Publikováno v:
IEEE Access, Vol 12, Pp 7224-7243 (2024)
As the current primary memory technology is reaching its limits, it is essential to explore alternative memory technologies to accommodate modern applications and use cases. However, using new memory technology poses the challenge of deriving accurat
Externí odkaz:
https://doaj.org/article/0e9a4d73f766454cb3c0243905974ffc
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 171-180 (2023)
In light of the growing prevalence of Internet of Things (IoT) devices, it has become essential to incorporate cryptographic protection techniques for high-security applications. Since IoT devices are resource-constraints in terms of power and area,
Externí odkaz:
https://doaj.org/article/2f4198466b4f4730b6df7a0183a072d9
Publikováno v:
Micromachines, Vol 15, Iss 4, p 488 (2024)
In the era of widespread edge computing, energy conservation modes like complete power shutdown are crucial for battery-powered devices, but they risk data loss in volatile memory. Energy autonomous systems, relying on ambient energy, face operationa
Externí odkaz:
https://doaj.org/article/664d7693ac8d4b5bb05f4a7742d5154c
Autor:
Gyuweon Jung, Jaehyeon Kim, Seongbin Hong, Hunhee Shin, Yujeong Jeong, Wonjun Shin, Dongseok Kwon, Woo Young Choi, Jong‐Ho Lee
Publikováno v:
Advanced Science, Vol 10, Iss 30, Pp n/a-n/a (2023)
Abstract Artificial olfactory systems (AOSs) that mimic biological olfactory systems are of great interest. However, most existing AOSs suffer from high energy consumption levels and latency issues due to data conversion and transmission. In this wor
Externí odkaz:
https://doaj.org/article/9864e803111847f6aa37e2ace34f726d
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 92-98 (2023)
This work presents a resistive random access memory (RRAM)-bias current-starved ring oscillator (CSRO) as true random number generator (TRNG), where the cycle-to-cycle variability of an RRAM device is exploited as source of randomness. A simple volta
Externí odkaz:
https://doaj.org/article/9fa6dbeded8d47ab8dbc5151ba9fc61c
Publikováno v:
Frontiers in Nanotechnology, Vol 5 (2023)
Externí odkaz:
https://doaj.org/article/dcebae71399d42bca1ec17f6a064cf6a
Autor:
Masud Rana Sk, Shubham Pande, Franz Müller, Yannick Raffel, Maximilian Lederer, Luca Pirro, Sven Beyer, Konrad Seidel, Thomas Kämpfe, Sourav De, Bhaswar Chakrabarti
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 4, Iss , Pp 100050- (2023)
In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations. We have considered the pr
Externí odkaz:
https://doaj.org/article/112c0944306b4ae0be67582807282193
Autor:
Vivek Parmar, Franz Müller, Jing-Hua Hsuen, Sandeep Kaur Kingra, Nellie Laleni, Yannick Raffel, Maximilian Lederer, Alptekin Vardar, Konrad Seidel, Taha Soliman, Tobias Kirchner, Tarek Ali, Stefan Dünkel, Sven Beyer, Tian-Li Wu, Sourav De, Manan Suri, Thomas Kämpfe
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can accelerate multiply and accumulate (MAC) operation of deep neural network (DNN). However, NVM‐based synaptic cores suffer from the trade‐off between bit density a
Externí odkaz:
https://doaj.org/article/7056e755c1db4aa49054c6baa0945bda
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