Zobrazeno 1 - 10
of 7 314
pro vyhledávání: '"NMOS logic"'
Akademický článek
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Publikováno v:
Materials Today: Proceedings. 80:2071-2075
As the technology is scaled-down and with a decrease in oxide thickness, the effect of NBTI is a major reliability issue in semiconductor industries. NBTI is an aging phenomenon in which the PMOS transistor degraded over time. Deviation in the thresh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::226a97283255030f7b9b7fa61ee086d2
https://doi.org/10.1016/j.matpr.2021.06.115
https://doi.org/10.1016/j.matpr.2021.06.115
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 69:366-377
This paper presents an amplifier-chain-based XOR physical unclonable function (AC-XOR PUF), with the process- and/or bias-dependent voltage and amplification information of two identical amplifier chains serving as the entropy sources. The current-bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c8a1197a5027c08ca326f8d40da76d
https://doi.org/10.1109/tcsi.2021.3114084
https://doi.org/10.1109/tcsi.2021.3114084
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 69:35-39
A new approach based on a strong degeneracy state to design oscillators that exhibit low phase noise and low power consumption is presented. A 100-MHz oscillator is designed using a periodic structure based on a degenerate band edge that is augmented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a68443219b5d4291f7c36daeaf5ca84
https://doi.org/10.1109/tcsii.2021.3088322
https://doi.org/10.1109/tcsii.2021.3088322
Conference
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Autor:
Chiuan-Huei Shen, Zong-Han Lu, Cheng-Chen Lin, Dong-Ru Hsieh, Chen-Feng Chang, Tien-Sheng Chao
Publikováno v:
IEEE Transactions on Electron Devices. 68:6118-6123
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfd0eb9e558f3b3ab0c1ded0f65c8e16
https://doi.org/10.1109/ted.2021.3122885
https://doi.org/10.1109/ted.2021.3122885
Publikováno v:
IEEE Transactions on Nuclear Science. 68:2724-2735
Effects of ~35 years of aging during storage are investigated on the radiation response and 1/f noise of Oki nMOS and pMOS transistors with high oxygen vacancy densities in SiO2. Short-term interface-trap buildup during irradiation is enhanced signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad0d66c4f44ecafb1565b6011b471078
https://doi.org/10.1109/tns.2021.3128835
https://doi.org/10.1109/tns.2021.3128835
Autor:
Carl H. Naylor, Chelsey Dorow, O'brien Kevin P, Kirby Maxey, Arnab Sen Gupta, Andy Hsiao, Tronic Tristan A, Penumatcha Ashish Verma, Scott B. Clendenning, Gosavi Tanay, Matthew V. Metz, Michael Christenson, Sudarat Lee, Robert L. Bristol, Uygar E. Avci, Alaan Urusa, A. A. Oni, Hui Zhu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6592-6598
2-D-material channels enable ultimate scaling of MOSFET transistors and will help Moore's Law scaling for years. We demonstrate the state of both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels of sub-1 nm thickness an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d41c0f0bcfb98257799a5d37068b6f06
https://doi.org/10.1109/ted.2021.3118659
https://doi.org/10.1109/ted.2021.3118659
Akademický článek
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Publikováno v:
International Journal of Circuits, Systems and Signal Processing. 15:1632-1642
The polynomial form of the input impedance of a CMOS cross-coupled amplifier with NMOS only active inductor are proposed. The formula of polynomial form and novel coefficients are programmed in Scilab and MATLAB so that the pole position of the fourt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08fc070f458cce8b552bf925f16648b9
https://doi.org/10.46300/9106.2021.15.176
https://doi.org/10.46300/9106.2021.15.176