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Few‐layered MoS2 Based Vertical van der Waals p‐n Homojunction by Highly‐efficient N2 Plasma Implantation.

Autor: Shan, Yufeng, Yin, Ziwei, Zhu, Jiaqi, Li, Xin, Dou, Wei, Wang, Yue, Liu, Chixian, Deng, Huiyong, Dai, Ning

Publikováno v: Advanced Electronic Materials; Oct2022, Vol. 8 Issue 10, p1-9, 9p

An Ultrasensitive and Broad‐Spectrum MoS2 Photodetector with Extrinsic Response Using Surrounding Homojunction.

Autor: Liu, Xiaoyan^1,2,3 (AUTHOR), Zhu, Jiaqi¹ (AUTHOR), Shan, Yufeng¹ (AUTHOR) shanyufeng@ucas.ac.cn, Liu, Changlong^1,3 (AUTHOR), Pan, Changyi^1,4 (AUTHOR), Zhang, Tianning^1,4 (AUTHOR), Liu, Chixian⁴ (AUTHOR), Chen, Tianye^3,4 (AUTHOR), Ling, Jingwei⁴ (AUTHOR), Duan, Junli¹ (AUTHOR), Qiu, Feng¹ (AUTHOR), Rahman, Saqib¹ (AUTHOR), Deng, Huiyong^1,4 (AUTHOR) hydeng@mail.sitp.ac.cn, Dai, Ning^1,2,4,5 (AUTHOR) ndai@mail.sitp.ac.cn

Publikováno v: Advanced Science. 12/4/2024, Vol. 11 Issue 45, p1-10. 10p.

Formation of oxynitride layers in a RF plasma planar reactor for future Si and SiC MOS structures.

Autor: Bieniek, T., Beck, R., Jakubowski, A., Konarski, P., Cwil, M., Hoffmann, P., Schmeisser, D.

Publikováno v: Journal of Superhard Materials; Jun2007, Vol. 29 Issue 3, p177-180, 4p

Plasma Surface Modification and Plasma Polymerization

Autor: Norihiro Inagaki

In current materials R&D, high priority is given to surface modification techniques to achieve improved surface properties for specific applications requirements. Plasma treatment and polymerization are important technologies for this purpose. This b