Výsledky vyhledávání

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

The Effect of Proton Implantation on Photoluminescence from Ensembles of InAs Quantum Dots Embedded in GaAs

Autor: Hao Yang Cui, N.Y. Tang

Publikováno v: Advanced Materials Research. :844-851

The light-emission efficiency of InAs/GaAs quantum dots (QDs) affected by proton implantation and subsequent annealing is investigated. The photoluminesce (PL) intensity is determined by the carrier capture time and non-radiative center (NRC) lifetim

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7df365d79bd8f8041504e794843bcaa
https://doi.org/10.4028/www.scientific.net/amr.774-776.844

Zobrazit plný text záznamu

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Akademický článek

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.

Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers

Autor: N.Y. Tang

Publikováno v: Journal of Magnetism and Magnetic Materials. 321:L41-L44

The spin-polarized tunneling current through a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector is investigated theoretically. Two distinct spin splitting peaks can be observed at current–voltage ( I–V ) ch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9760f504ef347563734ef481cf6113e7
https://doi.org/10.1016/j.jmmm.2009.02.049

Zobrazit plný text záznamu

Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well

Autor: N.Y. Tang, Pingping Chen, Tengkun Li, Chao Wang, Changtai Xia, Weipeng Lu, Fei Wang, Zhen Chen

Publikováno v: Journal of Crystal Growth. 289:547-551

Piezomodulated reflectance (PzR) spectra at 77 and 300 K have been measured for InAs/In 0.15 Ga 0.85 As dots-in-a-well and a conventional InAs/GaAs quantum dots. The optical features of both samples were well resolved and confirmed by photoluminescen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e835ea796a22104bbfb1fd9035557ba4
https://doi.org/10.1016/j.jcrysgro.2005.11.129

Zobrazit plný text záznamu

Piezomodulated and photomodulated reflectivity study of strained InxGa1–xAs/GaAs single quantum well

Autor: Pingping Chen, N.Y. Tang, Chao Wang, Changtai Xia, Xurong Chen, W. J. Lu

Publikováno v: Physics Letters A. 350:269-273

Signatures associated with electronic states confined in two strained In x Ga 1– x As/GaAs single quantum wells have been observed in its piezomodulated (PzR) and photomodulated (PR) reflectivity spectra. One comparison of the relative intensity be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9e1ce51a6991f473754b60601e94a9c
https://doi.org/10.1016/j.physleta.2005.10.015

Zobrazit plný text záznamu

Hydrostatic pressure coefficients of the photoluminescence of InAs/GaAs quantum dots

Autor: Xurong Chen, N.Y. Tang, W. J. Lu

Publikováno v: Physics Letters A. 336:434-439

There is a significant diminution in the hydrostatic pressure coefficients (PCs) of the photoluminescence spectrum for InAs/GaAs quantum dots in comparison with that of bulk binary. We study this phenomenon with the nonlinear elasticity theory. The v

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d39c9d1370b46b6da9f588baa7cac7f
https://doi.org/10.1016/j.physleta.2005.01.051

Zobrazit plný text záznamu

On the mean residual life regression model

Autor: Kam Chuen Yuen, N.Y. Tang, Lixing Zhu

Publikováno v: Journal of Statistical Planning and Inference. 113:685-698

In this paper, goodness-of-fit testing for the mean residual life regression model recently proposed by Maguluri and Zhang (1994) is studied. The test statistic is derived from a model-based process which is asymptotically Gaussian. Since the asympto

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b274ec03ead97baedc0232a3bbfbc65
https://doi.org/10.1016/s0378-3758(02)00091-5

Zobrazit plný text záznamu

Strong green electroluminescence from silicon based oxide films

Autor: Lanjian Zhuge, Y.M Dong, Y.H Yu, X.M Wu, W.G Yao, Z.Y Ning, N.Y Tang, C.N Ye

Publikováno v: Surface and Coatings Technology. 154:82-87

Electroluminescence (EL) devices have been fabricated on three types of silicon based oxide films (Ge–SiO 2 films, Si–SiO 2 films, and Al–SiO 2 films). Visible EL from the devices can be seen with the naked eye when the bias voltage greater tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ae6f7264839114568afbddb1adead08
https://doi.org/10.1016/s0257-8972(01)01704-2

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání