Zobrazeno 1 - 10
of 141
pro vyhledávání: '"N.V. Sochinskii"'
Publikováno v:
Journal of Crystal Growth. 526:125219
Cd1−xZnxTe (CZT) crystals find interesting uses in a variety of detector-type applications. However, it is well known that the concentration and distribution of Te inclusions within a device are one of the major contributions to the degradation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::406bb4dfde726fcb564205bd4bce192f
https://doi.org/10.1016/j.jcrysgro.2019.125219
https://doi.org/10.1016/j.jcrysgro.2019.125219
Autor:
Robert A. Hughes, Peter Mascher, John S. Preston, N.V. Sochinskii, James F. Britten, Svetlana Neretina
Publikováno v:
Applied Physics A. 96:429-433
The small lattice mismatch and sixfold symmetry offered by the (0001) planes of sapphire make it an ideal substrate candidate for the deposition of (111) CdTe films. There, however, exists a wide disparity in film quality among various researchers wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f19b76981ccc31ca238a3a0eb201d77
https://doi.org/10.1007/s00339-009-5285-0
https://doi.org/10.1007/s00339-009-5285-0
Autor:
Edgardo Saucedo, Omar S. Martinez, Osvaldo Vigil-Galán, I. Benito, Carmen M. Ruiz, Ernesto Diéguez, L. Fornaro, N.V. Sochinskii
Publikováno v:
Journal of Crystal Growth. 291:416-423
CdTe:Bi crystals were grown by the vertical Bridgman method, varying the nominal Bi-dopant concentration in the range of 1×10 17 –1×10 19 at/cm 3 . Bi and Bi 1.8−2.3 Te precipitates are the most characteristic structural defects in these crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c959a071f605de657f05da5f912caf
https://doi.org/10.1016/j.jcrysgro.2006.03.049
https://doi.org/10.1016/j.jcrysgro.2006.03.049
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
instname
instname
The defect structure of CdTe doped with Yb and co-doped with Ge was investigated by a set of optical (photoluminescence, absorption, photoconductivity), galvanomagnetic and thermoelectric methods. The results can be explained by a model, in which Yb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8198a5a71bbde328300e929eba34171
https://doi.org/10.1016/j.jcrysgro.2005.10.022
https://doi.org/10.1016/j.jcrysgro.2005.10.022
Publikováno v:
Infrared Physics & Technology. 46:181-184
We demonstrate the application of infrared photoluminescence (IRPL) imaging technique for the structural studies of infrared materials such as HgCdTe/Cd(Zn)Te heterostructures grown by liquid phase epitaxy (LPE). The two-dimensional IRPL maps were re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae8ef3a592ff7c5e7d61c3c1b109c1a
https://doi.org/10.1016/j.infrared.2004.03.023
https://doi.org/10.1016/j.infrared.2004.03.023
Autor:
L. Fornaro, N.V. Sochinskii, Victoria Corregidor, J. Silveira, Ernesto Diéguez, Edgardo Saucedo
Publikováno v:
The European Physical Journal Applied Physics. 27:207-211
The first experimental results about the growth and characterization of Pb 1-x Cd x Te new high-Z ternary alloy, grown by Vapour Phase Epitaxy (VPE) onto CdTe single crystal substrates are presented. SEM images have shown a well-defined interface bet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0188b9069926c5cbf95a3527ff836139
https://doi.org/10.1051/epjap:2004141
https://doi.org/10.1051/epjap:2004141
Publikováno v:
Thin Solid Films. 381:48-51
Vapor phase epitaxy (VPE) of Hg1−xCdxI2 layers on glass substrates covered by a CdTe buffer layer has been studied. The buffer layers of 2–4 μm thickness were formed by VPE using polycrystalline CdTe and Cd metal sources. The Hg1−xCdxI2 layers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eabb26846898a1171579074d543649b
https://doi.org/10.1016/s0040-6090(00)01197-4
https://doi.org/10.1016/s0040-6090(00)01197-4
Publikováno v:
Journal of Crystal Growth. 197:688-693
To reduce Hg high pressure related to the high-temperature synthesis reaction between the components in elemental form, Hg 1-x Mn x Te bulk crystals were produced by a two-step procedure including (I) the alloy synthesis using HgTe crystals grown by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::244863c6154d635882d87e76d1952506
https://doi.org/10.1016/s0022-0248(98)00795-7
https://doi.org/10.1016/s0022-0248(98)00795-7
Publikováno v:
Journal of Crystal Growth. 192:342-345
We demonstrate the possibility of growing Hg 1− x Cd x I 2 layers on sapphire substrates by vapor-phase epitaxy (VPE). The successful growth has been carried out using an α-HgI 2 polycrystalline source and a CdTe buffer layer grown on sapphire by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::756af4457cfc14eb748a8f1a8b1ad6ea
https://doi.org/10.1016/s0022-0248(98)00431-x
https://doi.org/10.1016/s0022-0248(98)00431-x
Autor:
J. I. Espeso, N.V. Sochinskii, M.F. da Silva, Eduardo Alves, Ernesto Diéguez, J.C. Soares, S. Bernardi, C. Marín, V. Muñoz
Publikováno v:
Scopus-Elsevier
CIÊNCIAVITAE
CIÊNCIAVITAE
Selective area (SA) Hg1 − xCdxTesapphire layers have been grown using the recently developed technique of the vapor-phase epitaxy (VPE) of Hg1 − xCdxTe layers on CdTesapphire heteroepitaxial substrates (HS), which we have called “VPE on HS tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a61b72d549131477eea8a2cccce11f5f
https://doi.org/10.1016/s0022-0248(97)00153-x
https://doi.org/10.1016/s0022-0248(97)00153-x