Zobrazeno 1 - 10
of 20
pro vyhledávání: '"N.V. Babushkina"'
Autor:
D.V. Zhygulin, K. Lawniczak-Jablonska, E. Dynowska, L.I. Romanova, T. Laiho, N.V. Babushkina, Sergei Malyshev
Publikováno v:
Applied Surface Science. 253:639-645
The crystalline structure and surface morphology of DyxOy dielectric films grown on Si substrates were studied by grazing incidence diffraction and absorption with use of synchrotron radiation and by atomic force microscopy. The crystalline structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55453f34a8dc089f11d1ad25fc88ccf7
https://doi.org/10.1016/j.apsusc.2005.12.150
https://doi.org/10.1016/j.apsusc.2005.12.150
Autor:
N.V Babushkina, S.A Malyshev
Publikováno v:
Solid-State Electronics. 42:217-220
High-quality silicon oxide films (dox=700–2000 A) have been deposited on n-type InP (100) substrates by chemical vapor deposition using pyrolysis of tetraethoxysilane (TEOS) in an O2/N2 flow at 300–350°C. The deposition rate was 2000–2500 A/h.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::142f11b28043bb537df2e8ebfb652981
https://doi.org/10.1016/s0038-1101(97)00236-0
https://doi.org/10.1016/s0038-1101(97)00236-0
Publikováno v:
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem.
The study of the charge properties of Dy/sub x/O/sub y/ films with the high permittivity (/spl epsiv//spl sim/10/spl divide/12) on the n-Si [100] is presented It is shown that suitable charge properties of the Ni-Dy/sub x/O/sub y/-n-Si [100] structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6519378105a7d8301b18cf5ee4bed362
https://doi.org/10.1109/asdam.2002.1088477
https://doi.org/10.1109/asdam.2002.1088477
Publikováno v:
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172).
Al-Dy/sub x/O/sub y/-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy/sub x/O/sub y/ films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O/sub 2/ environment (I) or in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94dd71989f4aa11e5d7d4d37ec304874
https://doi.org/10.1109/asdam.1998.730174
https://doi.org/10.1109/asdam.1998.730174
Autor:
N.V. Babushkina, S.A. Malyshev
Publikováno v:
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07f9f8713e7d8fb8e2c897c47b156641
https://doi.org/10.1109/asdam.1998.730189
https://doi.org/10.1109/asdam.1998.730189
Publikováno v:
ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386).
Al-Dy/sub x/O/sub y/-n-InP [100] structures with dysprosium oxide films Dy/sub x/O/sub y/ of 30 to 70 nm thickness have been studied. The influence of the film formation conditions on the Dy/sub x/O/sub y/-n-InP [100] interface charge properties are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b48feadb873e2aa8534035ee60cd416
https://doi.org/10.1109/asdam.2000.889520
https://doi.org/10.1109/asdam.2000.889520
Autor:
V.M. Koleshko, N.V. Babushkina
Publikováno v:
Thin Solid Films. 62:1-4
We investigated the properties of rare earth oxide films produced by the vacuum evaporation of rare earth metallic films and their oxidation in an oxygen atmosphere; we also studied the silicon-rare earth oxide interface. The rare earth oxide films w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6afeaed16345ee0e1a6a20f8b1c33a1
https://doi.org/10.1016/0040-6090(79)90374-2
https://doi.org/10.1016/0040-6090(79)90374-2
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