Zobrazeno 1 - 10
of 27
pro vyhledávání: '"N.S. Tsai"'
Autor:
Y.L. Yang, P.C. Tsao, C.W. Lin, Ross Lee, Olivia Ni, T.T. Chen, Y.J. Ting, C.T. Lai, Jason Yeh, Arnold Yang, Wayne Huang, Peng Chen, Charly Tsai, Ryan Yang, Y.S. Huang, B.C. Hsu, M.Z. Lee, T.H. Lee, Michael Huang, Coming Chen, Liham Chu, H.W. Kao, N.S. Tsai
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8513ca388886d6397134b90a16ce784
https://doi.org/10.1109/irps48203.2023.10118207
https://doi.org/10.1109/irps48203.2023.10118207
Akademický článek
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Publikováno v:
IEEE Transactions on Electron Devices. 41:692-697
Some anomalous behaviors, such as punchthrough voltage reduction, leakage current increase, and transconductance (g/sub m/) instability have been found in BF/sub 2/ implanted p/sup +/-polysilicon P-MOSFET's. These effects are supposed to be due to B-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a493382045277580ce577edddfa8c750
https://doi.org/10.1109/16.285018
https://doi.org/10.1109/16.285018
Autor:
D.R. Stone, W.T. Cochran, C.-W. Leung, B.C. Grugett, N.S. Tsai, T. Yang, M.-L. Chen, M.J. Thoma
Publikováno v:
Proceedings of the IEEE 1988 Custom Integrated Circuits Conference.
A fifth-generation, high-performance twin-tub, two-level metal, submicrometer CMOS technology has been developed for 5-V custom VLSI applications. This technology utilizes fabrication techniques of high-pressure oxidation (HIPOX) lightly doped drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08cce5967d41cf936f25495b0b68c35d
https://doi.org/10.1109/cicc.1988.20930
https://doi.org/10.1109/cicc.1988.20930
Publikováno v:
Technical Digest., International Electron Devices Meeting.
The authors report a novel method of fabricating chemical-vapor-deposited (CVD) small-grain tungsten films and its application to multilevel metal interconnects. By interrupting the tungsten grain growth using a layer of thin silicon and by consuming
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b27cceb2fa18d804788c84b7058362b
https://doi.org/10.1109/iedm.1988.32855
https://doi.org/10.1109/iedm.1988.32855
Publikováno v:
IEEE Transactions on Electron Devices. 41:458-460
Different post oxide annealing technologies, i.e. furnace and/or RTA were done in borophosphosilicate glass (BPSG) films under flow and reflow. It is found that the threshold voltage shift is apparent in P-MOSFET but small in N-MOSFET for a device wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd53cd9662b9191ef02076c61e69cd9c
https://doi.org/10.1109/16.275238
https://doi.org/10.1109/16.275238
Publikováno v:
1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.
Very shallow ( approximately 0.1 mu m) junctions are needed for sub-0.25 mu m MOSFET devices. These junctions can be made by implanting dopants into silicides and then drive out by RTA. Compared to furnace processed junctions, however, the RTA proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::550ad508e146db9c6e7212b4be5527f0
https://doi.org/10.1109/vtsa.1993.263619
https://doi.org/10.1109/vtsa.1993.263619
Publikováno v:
IEEE Electron Device Letters. 14:222-224
The characteristics of BF/sub 2/- or B-implanted polysilicon gate MOS capacitors with and without POCl/sub 3/ codoped were studied. It was found that the gate oxide thickness was increased very significantly with the number of high-temperature therma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6752a6577d63f6288f633f9a9ab86046
https://doi.org/10.1109/55.215174
https://doi.org/10.1109/55.215174
Conference
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Publikováno v:
Solid-State Electronics. 30:793-799
The subthreshold conduction behavior of DMOS and CMOS devices in the DI-BCDMOS (Bipolar-CMOS-DMOS) IC technology have been characterized and theoretically analyzed by an approximate model. The measured data are consistent with the simple model. And s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fce911da46eaefffdf344c99e6cc71f
https://doi.org/10.1016/0038-1101(87)90003-7
https://doi.org/10.1016/0038-1101(87)90003-7