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pro vyhledávání: '"N.S. Saks"'
Akademický článek
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Autor:
D.C. Mayer, Harold P. Hjalmarson, Marty R. Shaneyfelt, R.C. Lacoe, S.C. Witczak, E.E. King, G.L. Hash, N.S. Saks
Publikováno v:
IEEE Transactions on Nuclear Science. 49:2662-2666
The geometric component of charge pumping current was examined in n-channel metal-oxide-silicon field effect transistors (MOSFETs) following low-temperature irradiation. In addition to the usual dependencies on channel length and gate bias transition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aaad08b7f5c5100b3243977d4175617a
https://doi.org/10.1109/tns.2002.805987
https://doi.org/10.1109/tns.2002.805987
Publikováno v:
IEEE Transactions on Electron Devices. 42:1473-1480
We investigate the generation of electron traps by hole injection during hot-carrier stressing of n-MOSFETs. These generated electron traps are filled by an electron injection following the primary hole stress. The effect is proven and quantified by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43d57c37daa08f747233caf30f5c6dce
https://doi.org/10.1109/16.398662
https://doi.org/10.1109/16.398662
Publikováno v:
Solid-State Electronics. 35:843-854
In highly doped n -channel small geometry devices, the conduction band is quantized into discrete energy levels when the channel is inverted. In addition, the carriers are localized spatially, and the centroid of charge is a finite distance away from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fe9925bf29fe47c786517f310365a25
https://doi.org/10.1016/0038-1101(92)90287-m
https://doi.org/10.1016/0038-1101(92)90287-m
Publikováno v:
IEEE Transactions on Nuclear Science. 37:1690-1695
Hole trapping in thin-oxide MOSFETs at 80 K is examined. The existing field-collapse model accurately predicts saturation of the hole trapping in a 26-nm oxide, but it overestimates the saturation by a factor of two in a 9.5-nm oxide. A revised model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20373745380b7a3a58cc6d2e81fb77fa
https://doi.org/10.1109/23.101178
https://doi.org/10.1109/23.101178
Autor:
Mario G. Ancona, N.S. Saks
Publikováno v:
IEEE Transactions on Electron Devices. 37:1057-1063
The uniformity of the spatial distribution of (fast) interface traps N/sub it/ in small MOS devices was determined using charge pumping on MOSFETs with varying lengths and widths. The number of traps was found to be linearly proportional to both leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7902abd81b63bbe4d730cb7ab1f495
https://doi.org/10.1109/16.52442
https://doi.org/10.1109/16.52442
Autor:
Mario G. Ancona, N.S. Saks
Publikováno v:
IEEE Electron Device Letters. 11:339-341
A modified three-voltage-level charge pumping (CP) technique is described for measuring interface trap parameters in MOSFETs. Charge pumping (CP) is a technique for studying traps at the Si-SiO/sub 2/ interface in MOS transistors. In the CP technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be7cefda2b5a7435b2f3581af2c8103
https://doi.org/10.1109/55.57927
https://doi.org/10.1109/55.57927
Akademický článek
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Akademický článek
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Autor:
N.S. Saks
Publikováno v:
Solid-State Electronics. 18:737-744
The analysis of capacitance and conductance measurements as a function of frequency on MOS capacitors biased in depletion is well understood. However, little information is available on such measurements for capacitors biased in weak inversion. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3417598169979c1e8e6ba1a291421180
https://doi.org/10.1016/0038-1101(75)90150-1
https://doi.org/10.1016/0038-1101(75)90150-1