Výsledky vyhledávání - "N.S. Boltovets"

Nanocrystalline SiC film thermistors for cryogenic applications

Autor: N.S. Boltovets, V. A. Krivutsa, A. S. Slepova, V. F. Mitin, S. V. Novitskii, A. A. Kozlovskii, V. V. Kholevchuk, A. V. Semenov

Publikováno v: Review of Scientific Instruments. 89:025004

We developed a heat-sensitive material based on nanocrystalline SiC films obtained by direct deposition of carbon and silicon ions onto sapphire substrates. These SiC films can be used for resistance thermometers operating in the 2 K-300 K temperatur

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc373c5221109949390d0062091d7141
https://doi.org/10.1063/1.5024505

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Dual function sensors for concurrent measurement of temperature and magnetic field in cryogenic applications

Autor: V.F. Mitin, V. V. Kholevchuk, E.V. Mitin, V.V. Basanets, P.C. McDonald, N.S. Boltovets, F. Pavese

Publikováno v: Cryogenics. 48:413-416

Dual function sensors (DFSs) for concurrent measurement of temperature and magnetic field in cryogenic applications have been developed and characterized. The DFS consists of a Ge-on-GaAs film resistance thermometer and an InSb-on-GaAs film Hall-effe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3345be5f0fa124c87f95625412b74cb4
https://doi.org/10.1016/j.cryogenics.2008.04.002

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Ge-on-GaAs film resistance thermometers for cryogenic applications

Autor: Vitalii K. Dugaev, R. V. Konakova, V. V. Kholevchuk, P.V. Sorokin, I. Yu. Nemish, V.V. Basanets, P.C. McDonald, V.F. Mitin, N.S. Boltovets, E.V. Mitin, E. F. Venger, F. Pavese

Publikováno v: Cryogenics. 47:474-482

Our paper discusses and reviews the properties of a range of semiconductor sensors, which have been developed for thermometry in cryogenic applications. The range of sensors developed includes a family of single and dual element resistance thermomete

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8346bbd189927675e4215af83cebf3d8
https://doi.org/10.1016/j.cryogenics.2007.04.014

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Ge-film resistance and Si-based diode temperature microsensors for cryogenic applications

Autor: N.S. Boltovets, V.F. Mitin, R. V. Konakova, E. F. Venger, V. V. Kholevchuk

Publikováno v: Sensors and Actuators A: Physical. 92:191-196

New types of miniature (1.2 mm diameter×1.0 mm long) temperature sensors based on germanium (Ge) films and silicon diodes have been developed and produced. The Ge-film microthermometers are intended for use at temperatures from 1 to 400 K, and silic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1337c52133149bbd87c2645569504b55
https://doi.org/10.1016/s0924-4247(01)00562-3

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On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts

Autor: Petr M. Lytvyn, R. V. Konakova, N.S. Boltovets, I. V. Prokopenko, O. S. Lytvyn, V. V. Milenin, D.I. Voitsikhovskyi, E. F. Venger, N.L. Dmitruk, I. B. Ermolovich, V. N. Ivanov

Publikováno v: Applied Surface Science. 166:520-525

We present the results of structural, analytical, optical and electrophysical investigations of TiB x –GaAs contacts. They were obtained by magnetron sputtering from pressed powder targets and were studied before and after rapid (60 s) thermal anne

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a4519f68e5e639c96b5115656ee4b20f
https://doi.org/10.1016/s0169-4332(00)00486-4

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