Zobrazeno 1 - 10
of 40
pro vyhledávání: '"N.O. Korsunska"'
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 4, Pp 417-423 (2018)
Properties of thin films of ternary alloys Mg х Zn 1–х O on the optically-anisotropic Al 2 O 3 substrates in the area of “residual rays” of film and substrate are first investigated using the method of infrared spectroscopy and dispersion ana
Externí odkaz:
https://doaj.org/article/85d4fdf2048246f399f65401df5b7399
Autor:
I.O. Polishko, Y.M. Brodnikovskyi, D.M. Brodnikovskyi, N.O. Lysunenko, O.M. Myslyvchenko, O.V. Dudnik, M. Yu Smirnova-Zamkova, I.O. Marek, A.V. Kotko, O.D. Vasylyev, L. Yu. Khomenkova, R.V. Horda, L.L. Kovalenko, N.O. Korsunska, A.G. Bilous
Publikováno v:
2022 IEEE 12th International Conference Nanomaterials: Applications & Properties (NAP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa7e2f6fb97af22dde57405c90dccdea
https://doi.org/10.1109/nap55339.2022.9934290
https://doi.org/10.1109/nap55339.2022.9934290
Publikováno v:
Solid State Communications. 274:31-35
The photoluminescence (PL) and photoluminescence excitation (PLE) spectra of ZnS single crystals thermally doped from ZnS/MnS mixture were studied at 300 and 77 K. PL spectra exhibit bands caused by Mn-related centers and centers of self-activated (S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecef0b843808fbb36ab39af363982d99
https://doi.org/10.1016/j.ssc.2018.02.017
https://doi.org/10.1016/j.ssc.2018.02.017
Akademický článek
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Autor:
O.L. Stroyuk, Viktor Strelchuk, Ganna Chornokur, К.Yu. Pechers’ka, L.V. Borkovska, O.F. Kolomys, Sergei S. Ostapenko, C. Phelan, L. P. Germash, N.O. Korsunska, Tetyana Kryshtab
Publikováno v:
Superlattices and Microstructures. 51:353-362
The aging of the photoluminescence (PL) in bio-conjugated and non-conjugated CdSeTe–ZnS core–shell quantum dots (QDs) is studied by the micro-PL, micro-Raman and X-ray diffraction (XRD) in the samples of buffered QD solution dried on a crystallin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff46ff459f2755bdfb94bb46514a6574
https://doi.org/10.1016/j.spmi.2011.12.005
https://doi.org/10.1016/j.spmi.2011.12.005
Akademický článek
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Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 10:21-25
The process of thermal decomposition of SiOx layers prepared by magnetron sputtering is studied with the use of photoluminescence and Auger and SIMS spectroscopies. From these measurements, we obtained the distributions of the emission properties and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca8cb6029c52d98da07a614466aec6bc
https://doi.org/10.15407/spqeo10.04.021
https://doi.org/10.15407/spqeo10.04.021
Autor:
E. F. Venger, I.P Vargas, V. P. Kladko, Yu. G. Sadofyev, V.I. Kushnirenko, Tetyana Kryshtab, M.A Vidal, N.O. Korsunska, G. N. Semenova, L. V. Borkovska, M. O. Mazin
Publikováno v:
Journal of Alloys and Compounds. 371:202-205
The structural and luminescence properties of Zn 1− x Cd x Se/ZnSe multi-quantum well (MQW) structures with high molar fraction of cadmium (30–50%) and wide ZnSe barriers (50, 100 and 500 nm) grown by molecular beam epitaxy (MBE) have been invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff1399000f4504184b196a2a634a8159
https://doi.org/10.1016/j.jallcom.2003.06.019
https://doi.org/10.1016/j.jallcom.2003.06.019
Autor:
Tetyana Kryshtab, Ye. Venger, M. O. Mazin, Yu. G. Sadofyev, L. V. Borkovska, N.O. Korsunska, O. Gudymenko, V. P. Kladko, V.I. Kushnirenko
Publikováno v:
Materials Science and Engineering: C. 23:715-719
The intrinsic defects and their distribution in CdSe/ZnSe self-assembled quantum dot heterostructures grown under variation of VI/II group beam pressure ratio are investigated by luminescent and high-resolution X-ray diffraction methods. In all sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778978dd3ab2a7b57105ece55953bd1a
https://doi.org/10.1016/j.msec.2003.09.127
https://doi.org/10.1016/j.msec.2003.09.127
Autor:
G. N. Semenova, V. V. Strelchuk, Yu. G. Sadofyev, V. V. Artamonov, M. V. Vuychik, M. Ya. Valakh, L. V. Borkovska, N.O. Korsunska
Publikováno v:
Materials Science and Engineering: B. 101:255-258
An efficient anti-Stokes photoluminescence (ASPL) in multistacked CdSe/ZnSe nanostructures with quantum dots (QDs) has been found under the excitation below the QD ground states. An efficiency of ASPL is a few percents of the Stokes one. The dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed2cac25a4b416dfa820d4b3dccc336
https://doi.org/10.1016/s0921-5107(02)00674-8
https://doi.org/10.1016/s0921-5107(02)00674-8