Zobrazeno 1 - 10
of 72
pro vyhledávání: '"N.N. Chubun"'
Fabrication and characterization of singly addressable arrays of polysilicon field-emission cathodes
Publikováno v:
Solid-State Electronics. 45:1003-1007
Polysilicon is a viable candidate material for field-emission microelectronics devices. It can be competitive for large size, cost-sensitive applications such as flat-panel displays and micro electro-mechanical systems. Singly addressable arrays of f
Autor:
L.N. Sudakova, N.N. Chubun
Publikováno v:
Applied Surface Science. 111:81-83
We report on a controlled porosity dispenser cathode using a new design and new manufacturing technology. Emission properties of this cathode in the temperature range of 800–1050°C are significantly greater than L, M and MM cathodes. Novel applica
Publikováno v:
[Proceedings] IVMC '93 Sixth International Vacuum Microelectronics Conference.
Low-freouency Fluctuation Characteristics And Current Stability Of Thin Film Field Emission Cathodes
Publikováno v:
[Proceedings] IVMC '93 Sixth International Vacuum Microelectronics Conference.
Publikováno v:
Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737).
In recent years, a significant progress has been reported in the area of field emission cathodes and cathode materials for cathodoluminescent vacuum light sources. In this research, we investigated mixes of individual industrially available red, gree
Publikováno v:
Third IEEE International Vacuum Electronics Conference (IEEE Cat. No.02EX524).
IVMC-2001 demonstrated how the vacuum microelectronics field has branched from its initial interest areas, which were predominantly microwave amplifier applications, through a decade of exploration of the field-emission flat-panel display, into new i
Publikováno v:
9th International Vacuum Microelectronics Conference.
Field electron microscope was used for investigation of change of Si deposit on W tip as result of action of some field emission current. Two kinds of deposit have been prepared: 10 monoatomic layers on the W tip deposited at room temperature and the
Publikováno v:
9th International Vacuum Microelectronics Conference.
Field electron emission of Mo on Mo, W on W and Re on Re vacuum deposits has been investigated. Many monatomic layers of Mo, W and Re have been deposited on the tip of the same material. A wide range of substrate temperature has been used: from room
Publikováno v:
9th International Vacuum Microelectronics Conference.
A new concept of field emission display (FED) based on ungated silicon field emission arrays with diamond coating is proposed. FED prototypes have been fabricated and tested in DC and pulse modes. Sufficiently bright light emission was observed at th
Publikováno v:
9th International Vacuum Microelectronics Conference.
High precision long-focus field-emission low-energy electron probe was designed on base of the thin-film cold cathode. Some parts of electrostatic focusing system and 10 GHz pulse modulator are integrated with the cathode. The electron probe operates