Zobrazeno 1 - 10 of 114 pro vyhledávání: '"N.M. Stus"'
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P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array
Autor: N.M. Stus, B. A. Matveev, Pavel N. Brunkov, A.A. Usikova, M.A. Remennyi, A. A. Lavrov, S. A. Karandashev, N. D. Il’inskaya
Publikováno v: Infrared Physics & Technology. 78:249-253
P-InAsSbP/n-InAs/n+-InAs single heterostructure photodiode monolithic array with linear impurity distribution in the space charge region and “bulk” n-InAs absorbing layer has been fabricated by the LPE method and studied for the first time. Unlik
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::72aa764ab6778215116c1d6bf8ff5c33
https://doi.org/10.1016/j.infrared.2016.08.013
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3
Low dark current P- InAsSbP /n- InAs/N-InAsSbP/n + - InAs double heterostructure back-side illuminated photodiodes
Autor: N. D. Il’inskaya, M.A. Remennyi, N.M. Stus, B. A. Matveev, Pavel N. Brunkov, N. G. Karpukhina, S. A. Karandashev, A.A. Usikova, A.A. Lavrov
Publikováno v: Infrared Physics & Technology. 76:542-545
P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ad6ddbb2429ff1502f764938f7aa48c2
https://doi.org/10.1016/j.infrared.2016.04.002
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4
InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range
Autor: M.A. Remennyi, N.M. Stus, Pavel N. Brunkov, B. A. Matveev, S. A. Karandashev, A.A. Lavrov, A.A. Usikova, N. D. Il’inskaya
Publikováno v: Infrared Physics & Technology. 73:232-237
Double heterostructure back-side illuminated photodiodes with a 10-μm thick InAs0.9Sb0.1 active layer have been fabricated, studied and characterized in the 77–353 K temperature range. Spectral response peculiarities and temperature induced peak s
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2eca8fa000a9a13d0fbbaa8e0939381b
https://doi.org/10.1016/j.infrared.2015.09.017
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5
P-InAsSbP/n 0-InAs/n +-InAs photodiodes for operation at moderate cooling (150–220 K)
Autor: N. M. Latnikova, S. A. Karandashev, A.A. Lavrov, N.M. Stus, Pavel N. Brunkov, M.A. Remennyi, E. N. Sevost’yanov, A. S. Petrov, B. A. Matveev, N. D. Il’inskaya
Publikováno v: Semiconductors. 48:1359-1362
InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 μm spectral region in a wide temperature range 77–300 K. Estimations of detectivity as well as p-n junction p
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c24523daa1e6d2e951d6bdda59dac148
https://doi.org/10.1134/s1063782614100066
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7
Spontaneous and stimulated emission in InAs LEDs with cavity formed by gold anode and semiconductor/Air interface
Autor: S. Karandashev, M. Remennyi, Nonna V. Zotova, B.A. Matveev, N.M. Stus, N. Il'inskaya
Publikováno v: physica status solidi (c). 2:927-930
The paper presents results on spectral and power measurements in InAsSbP/InAs double heterostructure flip-chip LEDs with cavity formed by bottom anode mirror and air/semiconductor interface in the temperature range of 77–573 K. Data on near and far
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4d92a8c81379e0913a17fad2d938b7f7
https://doi.org/10.1002/pssc.200460343
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8
InAs and InAsSb LEDs with built-in cavities
Autor: B. A. Matveev, M.A. Remennyi, N. D. Il’inskaya, N V Zotova, M. Aidaraliev, G. N. Talalakin, S. A. Karandashev, N.M. Stus
Publikováno v: Semiconductor Science and Technology. 18:269-272
The emission of episide down bonded InAsSbP/In(Ga)As/n+-InAs and graded InAsSb(P) light-emitting diodes (LEDs) with λmax = 3.3–5.5 μm has been modified with an 'internal' Fabry–Perot cavity or bandpass filter attached to the LED with an optical
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ce8ab30aedf2a46b6d2b486a957d9dc
https://doi.org/10.1088/0268-1242/18/4/312
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