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pro vyhledávání: '"N.J. Sauer"'
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Publikováno v:
IEEE Photonics Technology Letters. 19:1514-1516
We present the first optical equalizer realized on Indium Phosphide material that is also monolithically integrated with a semiconductor optical amplifier. We show that the device can mitigate inter-symbol interference arising from narrowband optical
Autor:
Andrew Adamiecki, G. Raybon, Christopher Richard Doerr, Jeffrey H. Sinsky, Liming Zhang, Peter J. Winzer, N.J. Sauer
Publikováno v:
IEEE Photonics Technology Letters. 19:1184-1186
We present a novel InP differential quadrature phase-shift-keying modulator design comprised of two electroabsorption modulators in a three-arm interferometer. The modulator is extremely compact, measuring only 1500 mum times 250 mum. We demonstrate
Autor:
Liming Zhang, Weiguo Yang, D. Van Thourhout, Christopher Richard Doerr, Barry Miller, N.J. Sauer
Publikováno v:
IEEE Photonics Technology Letters. 15:182-184
We present a new design for a digitally tunable laser using two waveguide grating routers with different free spectral range. For an N-channel device, both the number of required amplifiers and the number of required grating arms scale as the square
Autor:
M. D. Divino, T. Y. Chang, Herman M. Presby, J.E. Zucker, Thomas L. Koch, N.J. Sauer, M.N. Khan, Charles A. Burrus
Publikováno v:
Journal of Lightwave Technology. 12:2032-2039
We have designed and demonstrated the first semiconductor digital optical switches that use weighted-coupling Y-branches. Using the beam propagation method we model both conventional Y-branches as well as weighted-coupling, shaped Y-branches with two
Publikováno v:
IEEE Photonics Technology Letters. 4:1120-1123
Polarization-independent phase modulation in In/sub 1-x/Ga/sub x/As/InGaAlAs multiple-quantum-well waveguides is demonstrated for the first time. It is shown that by increasing the Ga fraction and hence the tensile strain in the quantum well the elec
Autor:
N.J. Sauer, K.F. Brown-Goebeler, Daniel S. Chemla, B. Tell, Tallis Y. Chang, K.L. Jones, Martin Wegener, J.E. Zucker
Publikováno v:
Journal of Crystal Growth. 111:475-478
The wide range of conduction-band discontinuity available in the GaInAs/AlGaInAs/AlInAs material system has enabled us to demonstrate high sensitivity, high speed optical modulators and switches based on the band filling effect in the novel blockaded
Autor:
Tallis Y. Chang, Paul A. Morton, N.J. Sauer, G.C. Wilson, J.E. Johnson, Thomas H. Wood, T. Tanbun-Ek, J. Yu
Publikováno v:
IEEE Photonics Technology Letters. 10:433-435
An electroabsorption modulated laser (EML) is linearized by emulation and reversal of the nonlinear distortion using a companion EML inside an optoelectronic interferometer. Suppression of composite second-order and triple-beat signals to
Autor:
David T. Neilson, Liming Zhang, A. Bhardwaj, N.J. Sauer, John E. Simsarian, Jurgen Gripp, Lawrence L. Buhl, P. Bernasconi, Weiguo Yang
Publikováno v:
2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.
An InP-InPGaAs material platform relying upon active material regrowth is used to fabricate a monolithic wavelength converter. Error-free conversion is demonstrated for RZ signals at 40 Gb/s in a Mach-Zehnder filter with differential signal input.
Publikováno v:
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology.