Zobrazeno 1 - 10
of 55
pro vyhledávání: '"N.I. Buchan"'
Autor:
P. Roentgen, W. Heuberger, N.I. Buchan, H. Kojima, T. Kobayashi, R. S. Deol, Abram Jakubowicz
Publikováno v:
Journal of Physics and Chemistry of Solids. 56:311-317
Photoluminescence (PL) measurements on Ga 0.52 In 0.48 P and Al 0.18 Ga 0.34 In 0.48 , P alloys, grown by metalorganic vapor phase epitaxy (MOVPE) on GaAs, have been made as a function of pressure up to about 4.5 GPa at 77 K. The substrates are orien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ad91668a166e94fa8b3a55e0ae3a6d
https://doi.org/10.1016/0022-3697(94)00199-5
https://doi.org/10.1016/0022-3697(94)00199-5
Autor:
N.I. Buchan, Ming L. Yu
Publikováno v:
Surface Science. 280:383-392
We have used a pulsed molecular beam and time-resolved mass spectrometry to study the pyrolysis of triethylgallium (TEGa) on GaAs(100) surfaces from room temperature to 450°C. The β-hydride elimination pathway which produces ethylene and hydrogen c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95208f1efba781e67f7de1a8c246b4b2
https://doi.org/10.1016/0039-6028(93)90691-c
https://doi.org/10.1016/0039-6028(93)90691-c
Autor:
D. McInturff, T. J. de Lyon, Jerry M. Woodall, N.I. Buchan, G.J. Scilla, Peter D. Kirchner, F. Cardone
Publikováno v:
Journal of Crystal Growth. 111:564-569
Carbon tetrachloride (CCl4) and chloroform (CHCl3) have been studied as carbon doping sources for the compound semiconductors GaAs, GaP, InP, and Ga0.51In0.49P grown by gas source MBE from elemental Group III sources and thermally cracked Group V hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78644717d59a87595536ac7d15c96d87
https://doi.org/10.1016/0022-0248(91)91040-h
https://doi.org/10.1016/0022-0248(91)91040-h
Publikováno v:
Journal of Crystal Growth. 110:405-414
The incorporation of carbon into GaAs grown by metalorganic vapor phase epitaxy has been studied through the addition of the halomethanes CCl 4 , CHCl 3 , CH 2 Cl 2 , CBr 4 , CI 4 , CHI 3 , CH 2 I 2 , CH 3 I and CH 4 . Growth temperatures of 600–75
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dcb7cb557366cd90e922a87c8852572
https://doi.org/10.1016/0022-0248(91)90276-b
https://doi.org/10.1016/0022-0248(91)90276-b
Publikováno v:
Journal of Applied Physics. 69:2156-2160
Secondary ion mass spectroscopy has been used to quantitatively determine the carbon concentration in nominally undoped GaAs grown by metalorganic vapor phase epitaxy from TMG (13C 99%) and AsH3. Both an increase in the V/III ratio and the addition o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f4f31bed493e350e339718503fd08e8
https://doi.org/10.1063/1.348743
https://doi.org/10.1063/1.348743
Publikováno v:
Journal of Crystal Growth. 107:331-336
The MOVPE growth of GaAs in a hot-wall system has been investigated using diethylgallium chloride ((C 2 H 5 ) 2 GaCl, DEGaCl), AsH 3 and H 2 . Recent measurements have determined the vapor pressure of DEGaCl, and have also determined that DEGaCl is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25fa9c81d36b8ec5ef3edb1ffc0d1cb8
https://doi.org/10.1016/0022-0248(91)90479-o
https://doi.org/10.1016/0022-0248(91)90479-o
Autor:
N.I. Buchan, J.M. Jasinski
Publikováno v:
Journal of Crystal Growth. 106:227-238
A mechanistic understanding of metalorganic vapor phase epitaxy (MOVPE) requires an understanding of fundamental parameters such as unimolecular gas phase (homogeneous) reaction rate constants. Using a large body of existing and estimated thermochemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f148c0407df88e64c261102d175e182
https://doi.org/10.1016/0022-0248(90)90068-v
https://doi.org/10.1016/0022-0248(90)90068-v
Publikováno v:
Journal of Crystal Growth. 102:126-136
The kinetics of the reaction between trimethylgallium (TMGa) and AsH3 were studied in a flow tube reactor with D2 as the carrier gas and using a time-of-flight mass spectrometer to analyze the products. Addition of TMGa accelerates AsH3 decomposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6acf6dd247e8a11187f3e27186a672c2
https://doi.org/10.1016/0022-0248(90)90893-p
https://doi.org/10.1016/0022-0248(90)90893-p
Publikováno v:
Journal of Crystal Growth. 102:103-116
The thermal decomposition of trimethylgallium (TMGa) has been studied in a variety of carrier gases, using a time-of-flight mass spectrometer to analyze the products and obtain kinetic information. N 2 and He give almost identical pyrolysis curves. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec33bdf36c133cc63f7c27e1885a83c4
https://doi.org/10.1016/0022-0248(90)90891-n
https://doi.org/10.1016/0022-0248(90)90891-n
Publikováno v:
Journal of Electronic Materials. 19:277-281
The incorporation of carbon into GaAs grown by metal-organic vapor phase epitaxy has been studied through the addition of CH2I2, CH3I, HI and I2 to the growth ambient. The epitaxial GaAs was grown using Ga(CH3)3 and AsH3 in a low pressure reactor. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e7fc3cb63e763d2f096fbf3d101c66
https://doi.org/10.1007/bf02733819
https://doi.org/10.1007/bf02733819