Zobrazeno 1 - 10
of 103
pro vyhledávání: '"N.I. Balalykin"'
Autor:
Jozef Huran, N.I. Balalykin, V. F. Minashkin, A. K. Potemkin, V. G. Shabratov, E. I. Gacheva, G.A. Luchinin, M. A. Nozdrin, G. D. Shirkov, V.S. Aleksandrov, V. V. Zelenogorsky
Publikováno v:
Physics of Particles and Nuclei Letters. 15:882-886
A prototype of a direct-current photoinjector (DC) with an electron energy of up to 400 keV is being developed at JINR for future electron accelerators (electron-positron colliders and free-electron lasers). This article describes the injector, one d
Publikováno v:
2020 IEEE International Conference on Plasma Science (ICOPS).
Autor:
E. I. Gacheva, Jozef Huran, G. D. Shirkov, V V Zelenogorskii, M. A. Nozdrin, A. K. Potemkin, N.I. Balalykin, V. F. Minashkin
Publikováno v:
Physics-Uspekhi. 60:1051-1058
Autor:
A. K. Poteomkin, Efim A. Khazanov, E. V. Katin, N.I. Balalykin, Grigory Trubnikov, M. A. Nozdrin, G.A. Luchinin, V. F. Minashkin, Jozef Huran, G. D. Shirkov, V V Zelenogorskii, E. I. Gacheva
Publikováno v:
Physics of Particles and Nuclei Letters. 13:897-900
A photoinjector prototype for future electron–positron colliders and free-electron lasers (FEL) is being developed at the Joint Institute for Nuclear Research (JINR). A 30-keV photogun stand, transmission (backside irradiated) photocathode concept,
Autor:
N.I. Balalykin, Eva Kováčová, Angela Kleinová, Alexander P. Kobzev, Jozef Huran, M. A. Nozdrin, Vlasta Sasinková
Publikováno v:
Thin Solid Films. 709:138200
Very thin N-doped nanostructured carbon films were deposited on quartz and sapphire substrate by radio-frequency reactive magnetron sputtering using carbon target and gas mixture of Ar and N2 or N2+H2 reactive gasses. Rutherford backscattering spectr
Autor:
N.I. Balalykin, Eva Kováčová, Alexander P. Kobzev, Vlasta Sasinková, G. D. Shirkov, Jozef Huran, M. A. Nozdrin
Publikováno v:
Journal of Physics: Conference Series. 1492:012034
Very thin carbon-based nitrogen-doped films of different thicknesses were deposited on double-side polished sapphire substrates by RF reactive magnetron sputtering. RBS and ERD were used to determine the elemental concentration in the films, and Rama
Autor:
Jozef Huran, Angela Kleinová, Vlasta Sasinková, A. Laurencikova, Eva Kováčová, N.I. Balalykin, Alexander P. Kobzev, M. A. Nozdrin
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
The carbon-based very thin films were deposited on silicon substrate and double side polished sapphire or quartz glass by RF reactive magnetron sputtering using a carbon target and gas mixtures Ar, N2 and H 2. Concentration of elements in the films w
Autor:
N.I. Balalykin, V. F. Minashkin, Victor V. Zelenogorskii, G. D. Shirkov, G.A. Luchinin, E. V. Katin, E. I. Gacheva, M. A. Nozdrin, Grigory Trubnikov, Anatoly Poteomkin, Efim A. Khazanov
Publikováno v:
IEEE Journal of Quantum Electronics. 50:522-529
The presented laser driver for a photoinjector of an electron linear accelerator delivers 10-ps long laser pulses with the energy of \(1.85~\mu \) J at the wavelength of 262 nm. Laser pulses irradiating with the repetition rate of 10 MHz form the rec
Autor:
N.I. Balalykin, Angela Kleinová, Jozef Huran, Alexander P. Kobzev, Vlasta Sasinková, L. Hrubčín, A.A. Feshchenko
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 753:14-18
In this study we report on the dependence of electron emission properties on the transmission photocathodes DC gun based on stainless steel mesh coated with diamond like carbon films prepared at various technological conditions. Diamond like carbon f
Autor:
N.I. Balalykin, Angela Kleinová, L. Hrubčín, Mária Sekáčová, Alexander P. Kobzev, Pavol Boháček, Jozef Huran, Sergey B. Borzakov, Valery Shvetsov
Publikováno v:
physica status solidi (a). 210:2756-2761
Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma-enhanced chemical vapor deposition (PECVD) technology using silane (SiH4), methane