Zobrazeno 1 - 10
of 71
pro vyhledávání: '"N.H. Yang"'
Autor:
C.W. Huang, L. Holcman, D. Fung, H.V. Meer, C.F. Hsu, C.H. Chen, J. Fernandez, Benjamin Colombeau, Y.T. Tasi, B.N. Guo, H.P. Chen, Kyu-Ha Shim, J. Kuo, H.C. Feng, M. Hou, S.A. Huang, K. Nafisr, S.Y. Liu, J.C. Lin, T.Y. Wen, G.C. Hung, C.l. Li, S. Lee, N.H. Yang, B. Yang, J.Y. Wu, C.C. Huang
Publikováno v:
2019 Symposium on VLSI Technology.
In advanced FinFET devices, STI gap fill and $\vert \text{LD}_{0}$ stress are responsible for fin defects, fin bending as well as device performance degradations due to the local layout effect (LLE). In this paper, for the first time, we look at diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa75ef549216eb99834f908eeeebe5a
https://doi.org/10.23919/vlsit.2019.8776517
https://doi.org/10.23919/vlsit.2019.8776517
Autor:
C. I. Li, M.S. Hsieh, Y. Zhang, J.Y. Wu, H.V. Meer, S. Lee, H.-J. Gossmann, B.N. Guo, Kyu-Ha Shim, T.Y. Wen, H.T. Chiang, Benjamin Colombeau, S.H. Lin, D. Liao, N.H. Yang, Jeff Kuo, M. Hou, S.H. Tsai, P.K. Hsieh
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
FinFET doping via implantation at room temperature could result in Fin damage within the Fin body and degrade Fin device performance. Heated implantation techniques are developed to address the detrimental effects on devices caused by the damage. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed2fb9d259022472634f2cc97e36925c
https://doi.org/10.1109/iit.2018.8807924
https://doi.org/10.1109/iit.2018.8807924
Autor:
N.H. Yang, Jeffrey M. Lauerhaas, Wesley Yu, Euing Lin, Ted Ming-Lang Guo, Don Kahaian, J.Y. Wu, J.F. Lin, Jeffery W. Butterbaugh, Chin-Cheng Chien, Anthony S. Ratkovich
Publikováno v:
Solid State Phenomena. 219:97-100
A single wafer silicon nitride (SiN) selective etch process with an etch rate greater than 80A/min of low-pressure chemical vapor deposited (LPCVD) SiN has been developed. Previous work with a similar single wafer system utilized a mixture of sulfuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e85619a9a57f6ee7206b7d8b6668d801
https://doi.org/10.4028/www.scientific.net/ssp.219.97
https://doi.org/10.4028/www.scientific.net/ssp.219.97
Autor:
J.Y. Wu, Wesley Yu, J.F. Lin, Euing Lin, A.N. Other, N.H. Yang, Alessandro Baldaro, Ted Ming-Lang Guo, Kenneth M. Robb, M.H. Chang, Chin-Cheng Chien
Publikováno v:
Solid State Phenomena. 219:78-80
As the demand for greater speed in semiconductor devices continues, a typical method of increasing charge mobility is to maximise the silicon strain at the depletion region in p-type transistors through the implementation of “Sigma Cavity” struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a389d1e0ace0c4a64f33734badc9d181
https://doi.org/10.4028/www.scientific.net/ssp.219.78
https://doi.org/10.4028/www.scientific.net/ssp.219.78
Autor:
J. Y. Wu, C. Chung, Thirumal Thanigaivelan, T. Wu, T. Toh, S. W. Yeh, C. Y. Yang, W. F. Chang, T.H. Lee, S. Chen, B.N. Guo, Benjamin Colombeau, J. F. Lin, S. C. Huang, D. Kouzminov, C. C. Chien, Nilay Pradhan, M. Hou, G. Li, Kyu-Ha Shim, Y. L. Chin, D. Barrett, N.H. Yang
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
Optimization of halo profile for advanced MOSFET device is important to control device short channel effect as well as device leakage. Multiple halo implants, such as mixture of Indium and boron to tailor the halo formation, have been used widely for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229c5324eac9a68fd05e27647febc256
https://doi.org/10.1109/iit.2014.6939771
https://doi.org/10.1109/iit.2014.6939771
Publikováno v:
Solar Energy Materials and Solar Cells. 63:197-205
WO x electrochromic (EC) "lms deposited by DC magnetron sputtering technique were investigated by XRD and STM measurements. The reversible microstructure changes of the WO x "lm between the bleached and colored EC states were revealed. The study indi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac5107219db0a34ed68564624edf5ec8
https://doi.org/10.1016/s0927-0248(00)00009-x
https://doi.org/10.1016/s0927-0248(00)00009-x
Publikováno v:
Applied Surface Science. 143:135-141
The crystalline property changes of a-WO 3 films deposited by reactive sputtering are studied using HREM, STM and other techniques. The results indicate that cyclical electrochemical hydrogen insertion and extraction weakens the amorphous feature and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::833c832622249edf5efc7a9f6815bd56
https://doi.org/10.1016/s0169-4332(98)00771-5
https://doi.org/10.1016/s0169-4332(98)00771-5
Publikováno v:
Surface and Coatings Technology. 110:184-187
The microstructural changes in WO x electrochromic (EC) films of bleached and colored states have been studied by high-resolution electron microscopy (HREM) analysis. The results reveal that drastic changes in microstructure occur during the coloring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d5610a76e82316753a638a2e412946a
https://doi.org/10.1016/s0257-8972(98)00697-5
https://doi.org/10.1016/s0257-8972(98)00697-5
Publikováno v:
Surface and Coatings Technology. 99:82-86
XPS, XRD and other techniques were used to study the phase, composition and valence states of W and ions of electrochromic (EC) WOx films prepared by DC magnetron reactive sputtering. The XRD results indicate that different EC WOx films consist of di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e81a8d18a7b994ada602493a406f09e
https://doi.org/10.1016/s0257-8972(97)00415-5
https://doi.org/10.1016/s0257-8972(97)00415-5
Publikováno v:
Rock Fragmentation by Blasting ISBN: 9780429220630
Reinforcement of soft clay ground using blast power is a novel technique, and its basic practice is as follows (Meng 2008, Deng 2006):1. A sand layer is laid on the ground, to be treated as a horizontal drainage passageway.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd75124a45e0d21a728fc5f9e4784860
https://doi.org/10.1201/b13759-120
https://doi.org/10.1201/b13759-120
