Zobrazeno 1 - 10
of 59
pro vyhledávání: '"N.G. Nakhodkin"'
Publikováno v:
Ukrainian Journal of Physics. 60:165-169
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::809c46411f607735cfa3f203a0bcc106
https://doi.org/10.15407/ujpe60.02.0165
https://doi.org/10.15407/ujpe60.02.0165
Publikováno v:
Surface Science. :789-796
The influence of atomic oxygen on the Si(0 0 1)/As, Si(0 0 1)/Sb and Si(0 0 1)/Bi surfaces has been investigated by MNDO-PM3 semiempirical method. The potential energy surfaces for atomic oxygen adsorbed on ideal Si(0 0 1)/M-(1 ML) surface (where M=A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::916c94773333e8c0f1a99e2d67caac3d
https://doi.org/10.1016/s0039-6028(02)01405-x
https://doi.org/10.1016/s0039-6028(02)01405-x
Publikováno v:
Surface Science. :119-123
It is found that Bi dimers in B positions (with axis perpendicular to Si dimer row) can make concerted movements in the same row. The estimated probability of such concerted movements of B dimers is at least by three orders of magnitude higher than u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06577f82eb45c0c46b5922e555dff54b
https://doi.org/10.1016/s0039-6028(02)01186-x
https://doi.org/10.1016/s0039-6028(02)01186-x
Publikováno v:
Surface Science. 497:47-58
We report on the first scanning tunneling microscopy (STM) observations demonstrating that the Si(1 0 0)-c(4×4) surface structure may have a point group symmetry 1 m. Along with those, we were able to reproduce well known images of a point group sym
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555dacc120e8dc06baf8bdb0439c8857
https://doi.org/10.1016/s0039-6028(01)01623-5
https://doi.org/10.1016/s0039-6028(01)01623-5
Publikováno v:
Surface science, 482-485(1), 370-375. Elsevier
Scanning tunneling microscopy has been used to investigate the initial adsorption stage of Bi on Si(1 0 0) and Ge(1 0 0) surfaces at room temperature. The most favorable position for a Bi ad-dimer on both surfaces is the B-configuration (Bi ad-dimer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6588ebce3c43a78150e35e99cb779d7
https://doi.org/10.1016/s0039-6028(01)00804-4
https://doi.org/10.1016/s0039-6028(01)00804-4
Publikováno v:
Surface science, 482-485(1), 702-707. Elsevier
Structural calculations of the Ge ad-dimer rotation on Ge(0 0 1)-2×1 and Ge(0 0 1)-c(4×2) surfaces were performed by ab initio and semiempirical methods. Besides the two (already known) stable adsorption sites on top of the substrate dimer rows (an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2570441bb31e1ba5f36e4cca0bdbd86e
https://doi.org/10.1016/s0039-6028(01)00805-6
https://doi.org/10.1016/s0039-6028(01)00805-6
Publikováno v:
Journal of Crystal Growth. 208:297-302
X-ray and electron diffraction have been used to study structure modifications in polysilicon films produced by low-pressure chemical vapour deposition. It was shown that additional diffraction reflections are observed in polysilicon films with fibro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c885ecc342baaa527233d4a7cc9e71
https://doi.org/10.1016/s0022-0248(99)00432-7
https://doi.org/10.1016/s0022-0248(99)00432-7
Publikováno v:
Surface Science. 384:L844-L847
Bismuth-covered Si(001) surface has been investigated by means of electron energy loss and Auger electron spectroscopy. The submonolayer coverage of Bi on Si(001) was found to reduce an initial sticking coefficient of molecular oxygen by two orders o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6863b80f781b664e2a4181d04dd8636
https://doi.org/10.1016/s0039-6028(97)00285-9
https://doi.org/10.1016/s0039-6028(97)00285-9
Autor:
T.V. Rodionova, N.G. Nakhodkin
Publikováno v:
Journal of Crystal Growth. 171:50-55
Secondary grain growth in 0.5 μm thick undoped and phosphorus-doped polysilicon films, produced by low-pressure chemical vapour deposition, is investigated by transmission electron microscopy. Analysis shows that the driving force for secondary grai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43c2486acdd802f0b13941d4bb921601
https://doi.org/10.1016/s0022-0248(96)00476-9
https://doi.org/10.1016/s0022-0248(96)00476-9
Publikováno v:
Surface Science. :585-589
The morphology of bismuth layers on Si(001) has been investigated by electron spectroscopy methods (AES, EELS) and thermodesorption mass-spectrometry. Island formation on the first Bi continuous monolayer occurs during bismuth deposition at room temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d8acc373bd053dc38b96d29b276fa7
https://doi.org/10.1016/0039-6028(95)00322-3
https://doi.org/10.1016/0039-6028(95)00322-3