Zobrazeno 1 - 10
of 47
pro vyhledávání: '"N.E. Grigoryan"'
Autor:
Christopher J. Rhodes, Vika V. Arzumanyan, Hrant N. Yeritsyan, Igor G. Assovsky, Aram A. Sahakyan, Hakob Davtyan, N.E. Grigoryan, Vachagan V. Harutyunyan, V. Tsakanov, Bagrat Grigoryan, Volodymyr S. Dekhtiarov
Publikováno v:
Acta Astronautica. 181:594-601
The design and operation of an experimental installation are described, used for simulating those factors that most greatly affect the properties of materials and microelectronic devices in conditions of the near Earth (Low Earth Orbit) environment.
Autor:
N.E. Grigoryan, N.B. Knyzyan, Khachatur V. Manukyan, A.H. Badalyan, V. V. Baghramyan, Vachagan V. Harutyunyan, A. A. Sargsyan, Ani Aprahamian
Publikováno v:
Ceramics International. 46:4992-4997
Microwave-assisted hydrothermal synthesis followed by high-temperature (1050 °C) calcination was used to prepare pure and cerium-doped zinc orthosilicate (Zn2SiO4) pigments. Nanoscale Zn2SiO4 and Ce–Zn2SiO4 powders were blended with potassium sili
Autor:
Vika V. Arzumanyan, Aram A. Sahakyan, Hrant N. Yeritsyan, V. Tsakanov, N.E. Grigoryan, Vachagan V. Harutyunyan, Gayane Amatuni, Bagrat Grigoryan
Publikováno v:
Journal of Modern Physics. 10:1125-1133
The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum dose of 3.3 × 1013 el/cm2. In-situ
Autor:
Vachagan V. Harutyunyan, Vahan Petrosyan, Armenuhi A. Khachatryan, Aram A. Sahakyan, Bagrat Grigoryan, Christopher J. Rhodes, N.E. Grigoryan, Gayane Amatuni, Hrant N. Yeritsyan
Publikováno v:
Journal of Electronic Materials. 47:4010-4015
This paper reports the formation of structural defects in the lattice of silicon (n-Si) single crystals, as a result of irradiation by different intensities and pulses of electrons. The samples were studied by means of Hall effect measurements of ele
Autor:
Gayane Amatuni, Hrant N. Yeritsyan, Vachagan V. Harutyunyan, Bagrat Grigoryan, N.E. Grigoryan, Aram A. Sahakyan, Christopher J. Rhodes, Arsham Yeremyan
Publikováno v:
Journal of Modern Physics. :1271-1280
This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different
Autor:
R. A. Montgomery, H. Vardanyan, Vachik Khachatryan, V. Kakoyan, R. Ajvazyan, Satoshi Nakamura, K. Livingston, Patrick Achenbach, N.E. Grigoryan, Amur Margaryan, Y. Toyama, S. Zhamkochyan, J. Pochodzalla, Sho Nagao, J. R. M. Annand
We propose a new experiment for decay pion spectroscopy of light hypernuclei at electron- and proton-beam facilities, using the recoil distance technique for separation of produced hypernuclei and a magnetic spectrometer for precise measurement of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69327c322babdb1da793a74bf2cf68be
http://arxiv.org/abs/1902.03075
http://arxiv.org/abs/1902.03075
Autor:
Bagrat Grigoryan, Arsham Yeremyan, V. Tsakanov, Aram A. Sahakyan, Hrant N. Yeritsyan, Gayane Amatuni, N.E. Grigoryan, Vachagan V. Harutyunyan
Publikováno v:
Journal of Electronic Materials. 46:841-847
We present the results of a study on localized electronic centers formed in crystals by external influences (impurity introduction and irradiation). The main aim is to determine the nature of these centers in the forbidden gap of the energy states of
Autor:
Gohar Tsakanova, L. R. Aloyan, Arsham Yeremyan, S. Sh. Tatikyan, M.V. Derdzyan, Gayane Amatuni, Rouben Aroutiounian, V.V. Harutiunyan, Norayr Martirosyan, Hakob Davtyan, Ashot Vardanyan, Vahagn Vardanyan, N.E. Grigoryan, V.V. Buniatyan, Bagrat Grigoryan, V. Tsakanov, Vahan Petrosyan, Vahe Sahakyan, S.G. Haroutyunian, Ashot Petrosyan, Aram A. Sahakyan, Laura Hakobyan, Avetis Simonyan, E. Tsovyan, Hrant N. Yeritsyan, Yeva B. Dalyan, Nelly Babayan, V.Sh. Avagyan, Gevorg Zanyan, L.G. Aslanyan, G.S. Melikyan, A.A. Sargsyan, K.L. Hovhannesyan, Vitali Khachatryan
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
The AREAL laser-driven RF gun provides 2–5 MeV energy ultrashort electron pulses for experimental study in life and materials sciences. We report the first experimental results of the AREAL beam application in the study of molecular-genetic effects
Autor:
Ashot Vardanyan, Vahan A. Sahakyan, Bagrat Grigoryan, Vardan Avagyan, Armenuhi A. Khachatryan, Eleonora A. Hakhverdyan, Hrant N. Yeritsyan, N.E. Grigoryan, Aram A. Sahakyan, Gayane Amatuni, Vachagan V. Harutyunyan
Publikováno v:
Journal of Modern Physics. :1413-1419
The studies of the influence of pico-second (4 × 10-13 sec.) pulse electron irradiation with energy of 3.5 MeV on the electrical-physical properties of silicon crystals (n-Si) are presented. It is shown that in spite of relatively low electron irrad
Autor:
Christopher J. Rhodes, N.E. Grigoryan, Bagrat Grigoryan, Vika V. Arzumanyan, Gayane Amatuni, Aram A. Sahakyan, Vachagan V. Harutyunyan, Hrant N. Yeritsyan, V. Tsakanov
Publikováno v:
Radiation Physics and Chemistry. 176:109056
A study was made of the introduction rate of radiation defects Δ N d e f / Δ D versus the fast electron irradiation dose ( D ) in semiconductor crystals of n-Si and n-GaP. We take the concentration of radiation defects concentration N d e f to be t