Zobrazeno 1 - 10
of 47
pro vyhledávání: '"N.E. Grigoryan"'
Autor:
Christopher J. Rhodes, Vika V. Arzumanyan, Hrant N. Yeritsyan, Igor G. Assovsky, Aram A. Sahakyan, Hakob Davtyan, N.E. Grigoryan, Vachagan V. Harutyunyan, V. Tsakanov, Bagrat Grigoryan, Volodymyr S. Dekhtiarov
Publikováno v:
Acta Astronautica. 181:594-601
The design and operation of an experimental installation are described, used for simulating those factors that most greatly affect the properties of materials and microelectronic devices in conditions of the near Earth (Low Earth Orbit) environment.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f7d7349e780c06bbeae9771f6b03f59
https://doi.org/10.1016/j.actaastro.2021.01.030
https://doi.org/10.1016/j.actaastro.2021.01.030
Autor:
N.E. Grigoryan, N.B. Knyzyan, Khachatur V. Manukyan, A.H. Badalyan, V. V. Baghramyan, Vachagan V. Harutyunyan, A. A. Sargsyan, Ani Aprahamian
Publikováno v:
Ceramics International. 46:4992-4997
Microwave-assisted hydrothermal synthesis followed by high-temperature (1050 °C) calcination was used to prepare pure and cerium-doped zinc orthosilicate (Zn2SiO4) pigments. Nanoscale Zn2SiO4 and Ce–Zn2SiO4 powders were blended with potassium sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f095f40d69735de03faa3901eb402e7
https://doi.org/10.1016/j.ceramint.2019.10.239
https://doi.org/10.1016/j.ceramint.2019.10.239
Autor:
Vika V. Arzumanyan, Aram A. Sahakyan, Hrant N. Yeritsyan, V. Tsakanov, N.E. Grigoryan, Vachagan V. Harutyunyan, Gayane Amatuni, Bagrat Grigoryan
Publikováno v:
Journal of Modern Physics. 10:1125-1133
The recombination processes for charge carriers have been studied in n-type silicon crystals which were irradiated by pico-second duration pulse electrons with energy of 3.5 MeV (ultrafast irradiation), and maximum dose of 3.3 × 1013 el/cm2. In-situ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45ae6e4024a22795899eb3cc301893a9
https://doi.org/10.4236/jmp.2019.109072
https://doi.org/10.4236/jmp.2019.109072
Autor:
Gayane Amatuni, Hrant N. Yeritsyan, Vachagan V. Harutyunyan, Bagrat Grigoryan, N.E. Grigoryan, Aram A. Sahakyan, Christopher J. Rhodes, Arsham Yeremyan
Publikováno v:
Journal of Modern Physics. :1271-1280
This paper reports results from an investigation of the interaction of displaced Si-self atoms (I) and their vacancies (V), with impurities in crystalline silicon (Si), as induced by micro-second pulse duration irradiation with electrons at different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55ca4cb661401706a09196b950ecb9b
https://doi.org/10.4236/jmp.2018.96075
https://doi.org/10.4236/jmp.2018.96075
Autor:
R. A. Montgomery, H. Vardanyan, Vachik Khachatryan, V. Kakoyan, R. Ajvazyan, Satoshi Nakamura, K. Livingston, Patrick Achenbach, N.E. Grigoryan, Amur Margaryan, Y. Toyama, S. Zhamkochyan, J. Pochodzalla, Sho Nagao, J. R. M. Annand
We propose a new experiment for decay pion spectroscopy of light hypernuclei at electron- and proton-beam facilities, using the recoil distance technique for separation of produced hypernuclei and a magnetic spectrometer for precise measurement of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69327c322babdb1da793a74bf2cf68be
http://arxiv.org/abs/1902.03075
http://arxiv.org/abs/1902.03075
Autor:
Bagrat Grigoryan, Arsham Yeremyan, V. Tsakanov, Aram A. Sahakyan, Hrant N. Yeritsyan, Gayane Amatuni, N.E. Grigoryan, Vachagan V. Harutyunyan
Publikováno v:
Journal of Electronic Materials. 46:841-847
We present the results of a study on localized electronic centers formed in crystals by external influences (impurity introduction and irradiation). The main aim is to determine the nature of these centers in the forbidden gap of the energy states of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8be371cf54259e38087e7567c54989f
https://doi.org/10.1007/s11664-016-4975-6
https://doi.org/10.1007/s11664-016-4975-6
Autor:
Gohar Tsakanova, L. R. Aloyan, Arsham Yeremyan, S. Sh. Tatikyan, M.V. Derdzyan, Gayane Amatuni, Rouben Aroutiounian, V.V. Harutiunyan, Norayr Martirosyan, Hakob Davtyan, Ashot Vardanyan, Vahagn Vardanyan, N.E. Grigoryan, V.V. Buniatyan, Bagrat Grigoryan, V. Tsakanov, Vahan Petrosyan, Vahe Sahakyan, S.G. Haroutyunian, Ashot Petrosyan, Aram A. Sahakyan, Laura Hakobyan, Avetis Simonyan, E. Tsovyan, Hrant N. Yeritsyan, Yeva B. Dalyan, Nelly Babayan, V.Sh. Avagyan, Gevorg Zanyan, L.G. Aslanyan, G.S. Melikyan, A.A. Sargsyan, K.L. Hovhannesyan, Vitali Khachatryan
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
The AREAL laser-driven RF gun provides 2–5 MeV energy ultrashort electron pulses for experimental study in life and materials sciences. We report the first experimental results of the AREAL beam application in the study of molecular-genetic effects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9ab0d8bdefc6f81cb86dfe725f891f47
https://doi.org/10.1016/j.nima.2016.02.028
https://doi.org/10.1016/j.nima.2016.02.028
Autor:
Christopher J. Rhodes, N.E. Grigoryan, Bagrat Grigoryan, Vika V. Arzumanyan, Gayane Amatuni, Aram A. Sahakyan, Vachagan V. Harutyunyan, Hrant N. Yeritsyan, V. Tsakanov
Publikováno v:
Radiation Physics and Chemistry. 176:109056
A study was made of the introduction rate of radiation defects Δ N d e f / Δ D versus the fast electron irradiation dose ( D ) in semiconductor crystals of n-Si and n-GaP. We take the concentration of radiation defects concentration N d e f to be t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98f10c7df0772c4f0cdb85a140aed340
https://doi.org/10.1016/j.radphyschem.2020.109056
https://doi.org/10.1016/j.radphyschem.2020.109056
Autor:
Laura Hakobyan, Hrant N. Yeritsyan, Ashot Vardanyan, Eleonora A. Hakhverdyan, Vahan A. Sahakyan, Armenuhi A. Khachatryan, Aram A. Sahakyan, Agasi S. Hovhannisyan, V. Tsakanov, N.E. Grigoryan, Bagrat Grigoryan, Gayane Amatuni, Vachagan V. Harutyunyan
Publikováno v:
Journal of Modern Physics. :2050-2057
Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db8d990e6b8c67c478406e2af94f3549
https://doi.org/10.4236/jmp.2015.614211
https://doi.org/10.4236/jmp.2015.614211
Autor:
V.V. Harutunyan, N.E. Grigoryan, Armenuhi A. Khachatryan, Hrant N. Yeritsyan, Aram A. Sahakyan, Vahan A. Sahakyan
Publikováno v:
Journal of Modern Physics. :1270-1276
While considerable progress has been achieved in radiation influence on the solid states, the quantitative assessment of defect production is very scarce. In this paper radiation defects studies in silicon crystals are briefly reviewed and comprehens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc4395943e0ccd9e4df0db3d9dddb42b
https://doi.org/10.4236/jmp.2015.69132
https://doi.org/10.4236/jmp.2015.69132